Effect of SiO2 Spacer-Layer Thickness on Localized Surface Plasmon-Enhanced ZnO Nanorod Array LEDs
Abstract
Research context
OpenAlex topics: ZnO doping and properties · GaN-based semiconductor devices and materials · Ga2O3 and related materials
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Affiliations
Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Funding
State Administration of Foreign Experts Affairs · Ministry of Education of the People's Republic of China · Ministry of Science and Technology of the People's Republic of China · China Postdoctoral Science Foundation · National Natural Science Foundation of China · Key Laboratory for UV-Emitting Materials and Technology, Northeast Normal University · State Key Laboratory of Applied Optics