Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates
Abstract
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Metal and Thin Film Mechanics
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Affiliations
Materials Department, University of California, Santa Barbara, California 93106, United States
Institute of Nano Optoelectronics Research and Technology, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia
CNRS−CRHEA, Rue Bernard Grégory, 06560 Valbonne, France
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93117, United States
Funding
Solid State Lighting and Energy Electronics Center, University of California Santa Barbara · University of California, Santa Barbara · Collaborative Research in Engineering, Science and Technology, Malaysia