journal article·2012-02-22

Electrochromic Behavior of WxSiyOz Thin Films Prepared by Reactive Magnetron Sputtering at Normal and Glancing Angles

Jorge Gil-Rostra, Manuel Cano, José M. Pedrosa, Francisco Javier Ferrer, Francisco García-García, Francisco Yubero, Agustín R. González-Elipe

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Abstract

This work reports the synthesis at room temperature of transparent and colored W(x)Si(y)O(z) thin films by magnetron sputtering (MS) from a single cathode. The films were characterized by a large set of techniques including X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), Fourier transform infrared (FT-IR), and Raman spectroscopies. Their optical properties were determined by the analysis of the transmission and reflection spectra. It was found that both the relative amount of tungsten in the W-Si MS target and the ratio O(2)/Ar in the plasma gas were critical parameters to control the blue coloration of the films. The long-term stability of the color, attributed to the formation of a high concentration of W(5+) and W(4+) species, has been related with the formation of W-O-Si bond linkages in an amorphous network. At normal geometry (i.e., substrate surface parallel to the target) the films were rather compact, whereas they were very porous and had less tungsten content when deposited in a glancing angle configuration. In this case, they presented outstanding electrochromic properties characterized by a fast response, a high coloration, a complete reversibility after more than one thousand cycles and a relatively very low refractive index in the bleached state.
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Research context

OpenAlex topics: Transition Metal Oxide Nanomaterials · Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Instituto de Ciencia de Materiales de Sevilla (CSIC-USE), Avenida Américo Vespucio 49, E-41092 Sevilla, Spain

Departamento de Sistemas Físicos, Químicos y Naturales, Universidad Pablo de Olavide, Ctra. Utrera km. 1, E-41013 Sevilla, Spain

Centro Nacional de Aceleradores (CSIC-USE), Thomas A. Edison 7, E-41092 Sevilla, Spain

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