journal article·2018-04-18Open access

Lateral Heterostructures Formed by Thermally Converting n-Type SnSe2to p-Type SnSe

Zhen Tian, Mingxing Zhao, Xiongxiong Xue, Wei Xia, Chenglei Guo, Yanfeng Guo, Yexin Feng, Jiamin Xue

ACS Applied Materials & Interfaces· Volume 10· Issue 15

Abstract

Different two-dimensional (2D) materials, when combined together to form heterostructures, can exhibit exciting properties that do not exist in individual components. Therefore, intensive research efforts have been devoted to their fabrication and characterization. Previously, vertical and in-plane 2D heterostructures have been formed by mechanical stacking and chemical vapor deposition. Here, we report a new material system that can form in-plane p–n junctions by thermal conversion of n-type SnSe2 to p-type SnSe. Through scanning tunneling microscopy and density functional theory studies, we find that these two distinctively different lattices can form atomically sharp interfaces and have a type II to nearly type III band alignment. We also demonstrate that this method can be used to create micron-sized in-plane p–n junctions at predefined locations. These findings pave the way for further exploration of the intriguing properties of the SnSe2–SnSe heterostructure.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · 2D Materials and Applications · Advanced Thermoelectric Materials and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

University of Chinese Academy of Sciences, Beijing 100049, China

School of Physics and Electronics, Hunan University, Changsha 410082, People’s Republic of China

Center for Excellence in Superconducting Electronics (CENSE), Chinese Academy of Sciences, Shanghai 200050, China

Funding

Natural Science Foundation of Shanghai · Ministry of Science and Technology of the People's Republic of China · Shanghai Municipal Human Resources and Social Security Bureau · Shanghai Municipal Education Commission · Science and Technology Commission of Shanghai Municipality · National Natural Science Foundation of China

References (59)

Show source-provided references
1. Zant, P. V.Microchip Fabrication; McGraw-Hill Education, 2004; pp 281–287.
2. 10.1038/natrevmats.2017.4610.1038/natrevmats.2017.46 ↗
3. 10.1038/natrevmats.2017.3310.1038/natrevmats.2017.33 ↗
4. 10.1126/science.aac943910.1126/science.aac9439 ↗
5. 10.1103/physrevlett.117.10680110.1103/physrevlett.117.106801 ↗
6. 10.1021/jacs.7b0021610.1021/jacs.7b00216 ↗
7. 10.1126/science.113068110.1126/science.1130681 ↗
8. 10.1038/nnano.2015.7010.1038/nnano.2015.70 ↗
9. 10.1126/science.110289610.1126/science.1102896 ↗
10. 10.1021/acs.nanolett.5b0321810.1021/acs.nanolett.5b03218 ↗
11. 10.1038/nnano.2012.9510.1038/nnano.2012.95 ↗
12. 10.1021/acs.nanolett.5b0374010.1021/acs.nanolett.5b03740 ↗
13. 10.1021/acs.nanolett.7b0150510.1021/acs.nanolett.7b01505 ↗
14. 10.1021/acs.nanolett.5b0453810.1021/acs.nanolett.5b04538 ↗
15. 10.1038/nnano.2014.22210.1038/nnano.2014.222 ↗
16. 10.1038/nmat409110.1038/nmat4091 ↗
17. 10.1038/nmat406410.1038/nmat4064 ↗
18. 10.1126/science.aab409710.1126/science.aab4097 ↗
19. 10.1038/ncomms874910.1038/ncomms8749 ↗
20. 10.1126/science.aan681410.1126/science.aan6814 ↗
21. 10.1103/physrev.143.53610.1103/physrev.143.536 ↗
22. 10.1088/0022-3727/1/7/30310.1088/0022-3727/1/7/303 ↗
23. 10.1063/1.496774410.1063/1.4967744 ↗
24. 10.1002/adma.20150387310.1002/adma.201503873 ↗
25. 10.1143/jpsj.14.28110.1143/jpsj.14.281 ↗
26. 10.1103/physrevb.41.589310.1103/physrevb.41.5893 ↗
27. 10.1038/nature1318410.1038/nature13184 ↗
28. 10.1126/science.aad374910.1126/science.aad3749 ↗
29. 10.1038/nphys349210.1038/nphys3492 ↗
30. 10.1016/j.susc.2016.03.01310.1016/j.susc.2016.03.013 ↗
31. 10.1063/1.499100310.1063/1.4991003 ↗
32. 10.1103/physrevlett.119.11640110.1103/physrevlett.119.116401 ↗
33. 10.1103/physrevb.96.16511810.1103/physrevb.96.165118 ↗
34. 10.1007/s12274-014-0676-810.1007/s12274-014-0676-8 ↗
35. 10.1002/aelm.20160029210.1002/aelm.201600292 ↗
36. 10.1021/acs.nanolett.5b0286110.1021/acs.nanolett.5b02861 ↗
37. 10.1063/1.493475010.1063/1.4934750 ↗
38. 10.1103/physrevb.92.08540610.1103/physrevb.92.085406 ↗
39. 10.1038/srep1983010.1038/srep19830 ↗
40. 10.1103/physrevb.93.04543110.1103/physrevb.93.045431 ↗
41. 10.1021/acs.nanolett.6b0072610.1021/acs.nanolett.6b00726 ↗
42. 10.1021/acs.nanolett.6b0154110.1021/acs.nanolett.6b01541 ↗
43. 10.1107/s002188988900691610.1107/s0021889889006916 ↗
44. 10.1088/0022-3719/10/8/03510.1088/0022-3719/10/8/035 ↗
45. 10.1103/physrevb.15.217710.1103/physrevb.15.2177 ↗
46. 10.1007/bf0266034410.1007/bf02660344 ↗
47. 10.1016/0022-3697(86)90059-410.1016/0022-3697(86)90059-4 ↗
48. Chen, C. J.Introduction to Scanning Tunneling Microscopy; Oxford University Press, 1993; pp 68–69.10.1093/oso/9780195071504.001.0001 ↗
49. 10.1038/nmat406110.1038/nmat4061 ↗
50. 10.1016/0022-3697(62)90004-510.1016/0022-3697(62)90004-5 ↗
51. Madelung, O.Semiconductors: Data Handbook; Springer Press, 2014; pp 579–603.
52. 10.1021/acs.nanolett.5b0179210.1021/acs.nanolett.5b01792 ↗
53. 10.1103/physrevb.94.12544310.1103/physrevb.94.125443 ↗
54. 10.1103/physrevb.47.55810.1103/physrevb.47.558 ↗
55. 10.1103/physrevb.49.1425110.1103/physrevb.49.14251 ↗
56. 10.1103/physrevlett.77.386510.1103/physrevlett.77.3865 ↗
57. 10.1103/physrevlett.67.233910.1103/physrevlett.67.2339 ↗
58. 10.1103/physrevapplied.6.01400910.1103/physrevapplied.6.014009 ↗
59. 10.1021/nl503635x10.1021/nl503635x ↗