Electron density control in WSe2 monolayers via photochlorination
Source abstract
Abstract
Abstract Modulation of the Fermi level using an ultraviolet (UV)-assisted photochemical method is demonstrated in tungsten diselenide monolayers. Systematic shifts and relative intensities between charged and neutral exciton species indicate a progressive and controllable decrease of the electron density and switch tungsten diselenide from n-type to a p-type semiconductor. The presence of chlorine in the 2D crystal shifts the Fermi level closer to the valence band while the effect can be only partially reversible via continuous wave laser rastering process. Chlorine species in the lattice are validated by x-ray photoelectron spectroscopy, while density functional theory calculations predict that adsorption of chlorine on the selenium vacancy sites leads to p-type doping. The results of our study indicate that photochemical techniques have the potential to enhance the performance of various 2D materials, making them suitable for integrated optoelectronics such as lateral nanopatterned p–n junctions.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (63)
Show source-provided references
1. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides10.1038/nphoton.2015.282 ↗
2. Two-dimensional atomic crystals10.1073/pnas.0502848102 ↗
3. Atomically thin MoS2: a new direct-gap semiconductor10.1103/PhysRevLett.105.136805 ↗
4. Electroluminescence in single layer MoS210.1021/nl400516a ↗
5. Valleytronics in 2D materials10.1038/natrevmats.2016.55 ↗
6. Twistronics: manipulating the electronic properties of two-dimensional layered structures through their twist angle10.1103/PhysRevB.95.075420 ↗
7. Recent developments in 2D materials for energy harvesting applications10.1088/2515-7655/acc7c8 ↗
8. Photodetectors based on graphene, other two-dimensional materials and hybrid systems10.1038/nnano.2014.215 ↗
9. 2D materials towards sensing technology: from fundamentals to applications10.1016/j.sbsr.2022.100540 ↗
10. Excitonic devices with van der Waals heterostructures: valleytronics meets twistronics10.1038/s41578-021-00408-7 ↗
11. Surface analysis of WSe2 crystals: spatial and electronic variability10.1021/acsami.6b08847 ↗
12. The role of chalcogen vacancies for atomic defect emission in MoS210.1038/s41467-021-24102-y ↗
13. Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor10.1126/sciadv.aaw2347 ↗
14. Large excitonic reflectivity of monolayer MoSe2 encapsulated in hexagonal boron nitride10.1103/PhysRevLett.120.037402 ↗
15. Excitons and trions in monolayer semiconductors with correlated electrons10.1103/PhysRevB.108.085303 ↗
16. Topological superconductivity in monolayer transition metal dichalcogenides10.1038/ncomms14985 ↗
17. Odd- and even-denominator fractional quantum Hall states in monolayer WSe210.1038/s41565-020-0685-6 ↗
18. Screening effects due to carrier doping on valley relaxation in transition metal dichalcogenide monolayers10.1063/1.4961110 ↗
19. Functionalization of monolayer MoS2 by substitutional doping: a first-principles study10.1016/j.physleta.2013.03.034 ↗
20. Possible doping strategies for MoS2 monolayers: an ab initio study10.1103/PhysRevB.88.075420 ↗
21. Functionalization of single-layer MoS2 honeycomb structures10.1021/jp2000442 ↗
22. Air-stable surface charge transfer doping of MoS2 by benzyl viologen10.1021/ja5033327 ↗
23. Tuning two-dimensional nanomaterials by intercalation: materials, properties and applications10.1039/C5CS00758E ↗
24. Post-synthesis modifications of two-dimensional MoSe2 or MoTe2 by incorporation of excess metal atoms into the crystal structure10.1021/acsnano.8b01580 ↗
25. Recent progress on localized field enhanced two-dimensional material photodetectors from ultraviolet–visible to infrared10.1002/smll.201700894 ↗
26. Progress on electronic and optoelectronic devices of 2D layered semiconducting materials10.1002/smll.201604298 ↗
27. Spatially selective reversible charge carrier density tuning in WS2 monolayers via photochlorination10.1088/2053-1583/aae45c ↗
28. Persistent room-temperature valley polarization in graphite-filtered WS2 monolayer10.1088/2053-1583/acc342 ↗
29. Tuning the valley polarization in WS2 monolayers via control of active defect sites induced by photochemical doping10.1063/5.0037423 ↗
30. Site selective doping of ultrathin metal dichalcogenides by laser-assisted reaction10.1002/adma.201503945 ↗
31. Laser-assisted chemical modification of monolayer transition metal dichalcogenides10.1002/adfm.201802949 ↗
32. One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy10.1038/nature25155 ↗
33. Exciton spectroscopy and unidirectional transport in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride10.1038/s41699-022-00354-0 ↗
34. Two-dimensional semiconductors for transistors10.1038/natrevmats.2016.52 ↗
35. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides10.1038/nnano.2012.193 ↗
36. Chemical vapor sensing with monolayer MoS210.1021/nl3043079 ↗
37. Anomalous Raman spectra and thickness-dependent electronic properties of WSe210.1103/PhysRevB.87.165409 ↗
38. Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe210.1016/j.ssc.2014.11.005 ↗
39. Excited excitonic states in 1L, 2L, 3L and bulk WSe2 observed by resonant Raman spectroscopy10.1021/nn504088g ↗
40. Relaxation and darkening of excitonic complexes in electrostatically doped monolayer formula presented: roles of exciton-electron and trion-electron interactions10.1103/PhysRevB.105.085302 ↗
41. Charge-tuneable biexciton complexes in monolayer WSe210.1038/s41467-018-05632-4 ↗
42. Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition10.1038/s41467-020-16023-z ↗
43. Guide to optical spectroscopy of layered semiconductors10.1038/s42254-020-00259-1 ↗
44. Thermodynamics of biexcitons in a GaAs quantum well10.1103/PhysRevB.50.15099 ↗
45. Room temperature observation of biexcitons in exfoliated WS2 monolayers10.1063/1.4983285 ↗
46. Highly (001)-textured p-type WSe2 thin films as efficient large-area photocathodes for solar hydrogen evolution10.1038/s41598-017-16283-8 ↗
47. Investigation of the mechanism of Ar+ ion-assisted Cl2 etching of GaAs{110}: role of ion-induced charge acceptor states10.1063/1.349542 ↗
48. Solid state effects in the electronic structure of TiCl4 studied by XPS10.1063/1.445567 ↗
49. Synthesis and structure of double-metal-layered scandium, yttrium and zirconium10.1021/ic00223a011 ↗
50. Synthesis, structure and reactivity of β-MoCl210.1021/ic00198a008 ↗
51. Core electron binding energy study of group IIb-VIIa compounds10.1021/ic50128a059 ↗
52. Family of two-dimensional transition metal dichlorides: fundamental properties, structural defects and environmental stability10.1021/acs.jpclett.2c00367 ↗
53. Li x (C5H5N) Y Fe2−Z Se2: a defect-resilient expanded-lattice high-temperature superconductor10.1021/acs.inorgchem.2c01906 ↗
54. Unfolding the band structure of van der Waals heterostructures10.1103/PhysRevMaterials.7.024004 ↗
55. Confinement of long-lived interlayer excitons in WS2/WSe2 heterostructures10.1038/s42005-021-00625-0 ↗
56. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution10.1126/sciadv.1602640 ↗
57. Electronic and optical properties of rocksalt-phase tungsten nitride (B1-WN)10.1116/1.4978030 ↗
58. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set10.1103/PhysRevB.54.11169 ↗
59. From ultrasoft pseudopotentials to the projector augmented-wave method10.1103/PhysRevB.59.1758 ↗
60. Projector augmented-wave method10.1103/PhysRevB.50.17953 ↗
61. Rationale for mixing exact exchange with density functional approximations10.1063/1.472933 ↗
62. Strain engineering of electronic properties of transition metal dichalcogenide monolayers10.1016/j.ssc.2015.11.017 ↗
63. Extracting E versus k effective band structure from supercell calculations on alloys and impurities10.1103/PhysRevB.85.085201 ↗