Phase-resolved surface photovoltage spectroscopy of GaSb microislands grown on p-type Si substrates
Source abstract
Abstract
Abstract Surface photovoltage (SPV) spectroscopy was applied to investigate GaSb microislands grown by thermal evaporation on p-type crystalline Si substrates with Ag nanocatalysts. The SPV amplitude and phase spectra were analysed to clarify the mechanisms of photovoltage generation in this heterostructured system. It is shown that the contribution of the free Si substrate to the overall SPV response is significantly reduced due to surface coverage by GaSb microislands. In addition to the substrate-related signal with a phase in the 2nd quadrant, an extra SPV component is identified with a phase in the 4th quadrant, opposite in sign to that from the substrate. A comparative analysis of the SPV amplitude and phase spectra of the GaSb/Si structure and bare Si indicates that this additional process originates from the GaSb/Si microstructures. Its spectral characteristics are qualitatively determined, and its possible physical origin, related to interface-induced charge separation, is discussed. The results demonstrate the capability of phase-resolved SPV spectroscopy to distinguish and analyse competing photovoltage generation processes in semiconductor micro-heterostructures.
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Research context
OpenAlex topics: solar cell performance optimization · Photocathodes and Microchannel Plates · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Sofia University
Bulgarian Academy of Sciences
Funding
Bulgarian National Science Fund · European Union-NextGenerationEU · National Recovery and Resilience Plan of the Republic of Bulgaria
References (32)
Show source-provided references
1. The physics and technology of gallium antimonide: an emerging optoelectronic material10.1063/1.365356 ↗
2. Electron mobility in GaSb solid10.1016/0038-1101(94)E0063-K ↗
3. Heteroepitaxial technologies of III–V on Si10.1016/S0927-0248(00)00209-9 ↗
4. Growth of heteroepitaxial GaSb thin films on Si(100) substrates10.1557/JMR.2004.0307 ↗
5. Structural evolution and characterization of heteroepitaxial GaSb thin films on Si(111) substrates10.1063/1.2715838 ↗
6. Growth mechanism and structure characterizations of GaSb islands grown on Si (1 0 0) substrates by LP-MOCVD10.1016/j.spmi.2015.04.022 ↗
7. Highly efficient radiative recombination of electron–hole pairs localized at compound semiconductor quantum dots embedded in Si10.1016/j.physe.2003.11.040 ↗
8. Initial growth stage of GaSb on Si (001) substrates with AlSb initiation layers10.1016/j.jcrysgro.2005.06.001 ↗
9. Structural and optical characterization of GaSb on Si (001) grown by molecular beam epitaxy10.1088/1361-6641/aafcbe ↗
10. Nano-ridge engineering of GaSb for the integration of InAs/GaSb heterostructures on 300 mm (001) Si10.3390/cryst10040330 ↗
11. Formation of a thin continuous GaSb film on Si(001) by solid phase epitaxy10.3390/nano8120987 ↗
12. Approaching the hole mobility limit of GaSb nanowires10.1021/acsnano.5b04152 ↗
13. Ultrahigh hole mobility of Sn-catalyzed GaSb nanowires for high speed infrared photodetectors10.1021/acs.nanolett.9b01503 ↗
14. Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires10.1038/ncomms6249 ↗
15. Near-infrared polarimetric image sensors based on ordered sulfur-passivation GaSb nanowire arrays10.1021/acsnano.2c01455 ↗
16. Structure and optical properties of silicon layers with GaSb nanocrystals created by ion-beam synthesis10.1002/pssa.201127060 ↗
17. High-quality GaSb epitaxially grown on Si (001) through defects self-annihilation for CMOS-compatible near-IR light emitters10.1364/OME.474007 ↗
18. Polycrystalline GaSb films prepared by the coevaporation technique10.1007/s00339-013-7974-y ↗
19. Photoresponse investigation of polycrystalline gallium antimonide (GaSb) thin films10.1063/1.5139056 ↗
20. Single-GaSb-nanowire-based room temperature photodetectors with broad spectral response10.1007/s11434-014-0687-6 ↗
21. Surface photovoltage phenomena: theory, experiment, and applications10.1016/S0167-5729(99)00002-3 ↗
22. Pan · 2015 · 327
23. Surface photovoltage spectroscopy of semiconductor materials for optoelectronic applications10.1088/2053-1591/ab3bf0 ↗
24. Surface photovoltage spectroscopy study of InAs quantum dot in quantum well multilayer structures for infrared photodetectors10.1016/j.spmi.2015.10.036 ↗
25. Optical properties of multi-layer type II InP/GaAs quantum dots studied by surface photovoltage spectroscopy10.1063/1.3638705 ↗
26. Unraveling photo-induced charge transfer properties at 3D/2D perovskite interfaces via in-situ surface photovoltage spectroscopy10.1016/j.apsusc.2023.157931 ↗
27. Surface photovoltage phase spectroscopy study of the photo-induced charge carrier properties of TiO2 nanotube arrays10.1007/s11426-011-4335-6 ↗
28. A vector model for analysing the surface photovoltage amplitude and phase spectra applied to complicated nanostructures10.1088/0022-3727/42/13/135302 ↗
29. Investigation of GaSb microislands deposited on Si substrates with Ag nanoparticles10.1021/acsomega.4c11478 ↗
30. Diffusion mobility and defect analysis in GaSb10.1016/S0022-0248(97)00847-6 ↗
31. Optical Properties
32. Sze · 2007