Hydrazine-free chemical bath deposition of WSe2 thin films and bi-layers for photovoltaic applications
Source abstract
Abstract
We report the photovoltaic performance of a diode based on a p-type tungsten diselenide (WSe 2 ) active region. The device is formed by WSe 2 and cadmium sulfide (CdS) layers, both obtained via chemical bath deposition. A novel hydrazine-free chemical formulation allows deposition of WSe 2 on glass and flexible Hastelloy substrates. Characterization of WSe 2 via Raman spectroscopy shows four bands at 189, 244, 293, and 588 cm −1 . The strongest band at 293 cm −1 is assigned to the interlayer interaction mode of the WSe 2 layers. The photoluminescent characterization of Hastelloy/CdS/WSe 2 samples exhibits two excitonic transitions at 1.7860 and 1.7899 eV. The current density-voltage (J-V) measurements of the CdS/WSe 2 structure show a photovoltaic response with V OC = 180 mV, J SC = 0.07 mA cm −2 , and FF = 0.22.
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OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
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References (43)
Show source-provided references
1. 10.1016/j.cjph.2017.08.01110.1016/j.cjph.2017.08.011 ↗
2. 10.1016/j.optcom.2017.05.01510.1016/j.optcom.2017.05.015 ↗
3. 10.1103/PhysRevB.89.07540910.1103/PhysRevB.89.075409 ↗
4. 10.1016/j.cjph.2017.08.01110.1016/j.cjph.2017.08.011 ↗
5. 10.1007/s11467-018-0854-310.1007/s11467-018-0854-3 ↗
6. 10.1016/j.nanoso.2017.08.00910.1016/j.nanoso.2017.08.009 ↗
7. 10.1126/science.119497510.1126/science.1194975 ↗
8. 10.1038/nchem.158910.1038/nchem.1589 ↗
9. 10.1038/s41598-018-31374-w10.1038/s41598-018-31374-w ↗
10. 10.1002/smll.20120291910.1002/smll.201202919 ↗
11. 10.1021/ar400231210.1021/ar4002312 ↗
12. 10.1039/C8SC01778F10.1039/C8SC01778F ↗
13. 10.1016/j.matlet.2017.04.06210.1016/j.matlet.2017.04.062 ↗
14. 10.1039/C4RA12599A10.1039/C4RA12599A ↗
15. 10.1007/s00339-018-2059-610.1007/s00339-018-2059-6 ↗
16. 10.1038/nnano.2010.27910.1038/nnano.2010.279 ↗
17. 10.1002/pssb.20087954510.1002/pssb.200879545 ↗
18. 10.1016/j.apsusc.2017.02.11110.1016/j.apsusc.2017.02.111 ↗
19. 10.1021/nl504256y10.1021/nl504256y ↗
20. 10.1039/C8NR09068H10.1039/C8NR09068H ↗
21. 10.1016/j.electacta.2017.10.08310.1016/j.electacta.2017.10.083 ↗
22. 10.1016/j.matchemphys.2008.07.04010.1016/j.matchemphys.2008.07.040 ↗
23. 10.1021/acsami.8b0472410.1021/acsami.8b04724 ↗
24. 10.1038/nnano.2014.1410.1038/nnano.2014.14 ↗
25. 10.1016/j.ijhydene.2017.12.16010.1016/j.ijhydene.2017.12.160 ↗
26. 10.1002/advs.20180023710.1002/advs.201800237 ↗
27. 10.1021/acs.jpcc.8b0145310.1021/acs.jpcc.8b01453 ↗
28. Luo M · Nanotechnology · 2018 · 29 · 444001-1–444001-6
29. 10.1038/s41467-018-05326-x10.1038/s41467-018-05326-x ↗
30. 10.1021/nn502776h10.1021/nn502776h ↗
31. 10.1063/1.35639110.1063/1.356391 ↗
32. 10.1063/1.35479610.1063/1.354796 ↗
33. 10.1016/j.colsurfa.2012.12.00310.1016/j.colsurfa.2012.12.003 ↗
34. 10.1002/zaac.20100001110.1002/zaac.201000011 ↗
35. Bindu K · Semicond. Sci. Technol. · 2004 · 19 · 134810.1088/0268-1242/19/12/003 ↗
36. 10.1016/0038-1098(77)91338-210.1016/0038-1098(77)91338-2 ↗
37. 10.1139/p77-05210.1139/p77-052 ↗
38. 10.1103/PhysRevB.87.16540910.1103/PhysRevB.87.165409 ↗
39. 10.1063/1.34769110.1063/1.347691 ↗
40. 10.1039/C7TA04268J10.1039/C7TA04268J ↗
41. 10.1039/C6CC00577B10.1039/C6CC00577B ↗
42. 10.1021/jacs.8b0339910.1021/jacs.8b03399 ↗
43. 10.1016/j.tsf.2011.01.14510.1016/j.tsf.2011.01.145 ↗