All-room-temperature processed high flexibility resistive switching memory by ultraviolet-radioactive induction

Alumina-based materials are widely used in semiconductor industry due to the high reliability. However, they are usually employed as high-k gate dielectric rather than memory layer, and high temperature annealing process is also required to maintain the electrical characteristics. These factors enormously limit their further applications in new semiconductor devices such as new type non-volatile memory and flexible electronic devices. In this work, a one-step ultraviolet irradiation method was applied to rapidly achieve AlO–OH thin film at room temperature for flexible resistive memory. This flexible memory device shows satisfied electrical characteristics such as typical unipolar resistive switching behaviors, stable retention, good electrical reliability and mechanical endurance both in flat and bent states. Anion vacancies in AlO–OH layer were contributed to the formation of conductive filament. This technical route with low cost and efficient fabrication process paves a feasible way for developing flexible non-volatile memory and wearable electronics.