Template assisted growth of microporous structures of CdSexTe1 −xand thin film photocurrent studies
Source abstract
Abstract
Ternary alloyed II?VI group semiconducting CdSe x Te1???x thin films (x?=?0.1 to 1) have been fabricated using electrodeposition technique for detailed photoelectrochemical study and to eventually grow their two-dimensional microporous photonic structures using self-assembled template for optoelectronic devices. Band gap tuning is achieved by controlling Se:Te ratio and the ratio of Se:Te has been controlled using appropriate precursors ratios and their respective concentrations, electrolyte pH etc. Extensive structural and photonic studies have been explored for alloyed CdSe x Te1???x thin films (x?=?0.1 to 1) to establish correlation between structural and optical properties for the series of x. The photoelectrochemical studies have shown a stable photocurrent response and confirmed the n-type semiconducting behaviour of CdSe x Te1???x thin films with photocurrent densities up to 0.6 mA cm?2.
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Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (28)
Show source-provided references
1. 10.1021/ja047092310.1021/ja0470923 ↗
2. 10.1002/pi.458210.1002/pi.4582 ↗
3. 10.1016/j.cocis.2008.09.00110.1016/j.cocis.2008.09.001 ↗
4. 10.1002/1521-4095(200006)12:12<3C888::aid-adma888>3E3.0.co;2-t10.1002/1521-4095(200006)12:12<3C888::aid-adma888>3E3.0.co;2-t ↗
5. 10.1016/j.physb.2005.03.00810.1016/j.physb.2005.03.008 ↗
6. 10.1016/j.jallcom.2010.06.13610.1016/j.jallcom.2010.06.136 ↗
7. Poelman D · J. Phys. D: Appl. Phys. · 1988 · 21 · 100410.1088/0022-3727/21/6/023 ↗
8. 10.1063/1.36391310.1063/1.363913 ↗
9. 10.1016/j.jcrysgro.2005.08.00510.1016/j.jcrysgro.2005.08.005 ↗
10. 10.1149/1.212960610.1149/1.2129606 ↗
11. 10.1063/1.33145610.1063/1.331456 ↗
12. 10.1016/0040-6090(79)90201-310.1016/0040-6090(79)90201-3 ↗
13. 10.1007/BF0109334810.1007/BF01093348 ↗
14. 10.1016/j.tsf.2005.01.03210.1016/j.tsf.2005.01.032 ↗
15. 10.1021/la304022710.1021/la3040227 ↗
16. 10.1016/j.matlet.2005.12.06710.1016/j.matlet.2005.12.067 ↗
17. 10.1016/j.matlet.2007.08.00810.1016/j.matlet.2007.08.008 ↗
18. 10.1016/j.matchemphys.2012.10.03910.1016/j.matchemphys.2012.10.039 ↗
19. 10.1016/s0254-0584(01)00573-910.1016/s0254-0584(01)00573-9 ↗
20. 10.1023/a:100896642833910.1023/a:1008966428339 ↗
21. 10.1016/S0927-0248(97)00247-X10.1016/S0927-0248(97)00247-X ↗
22. 10.1016/0165-1633(89)90002-610.1016/0165-1633(89)90002-6 ↗
23. 10.1016/0257-8972(91)90233-M10.1016/0257-8972(91)90233-M ↗
24. Kale R B · Semicond. Sci. Technol. · 2005 · 20 · 110.1088/0268-1242/20/1/001 ↗
25. 10.1103/PhysRevB.82.16520410.1103/PhysRevB.82.165204 ↗
26. 10.1021/j100143a04110.1021/j100143a041 ↗
27. 10.1038/3510460710.1038/35104607 ↗
28. 10.1021/la00048a05410.1021/la00048a054 ↗