Bipolar Resistance Switching in Transparent ITO/LaAlO3/SrTiO3 Memristors
Source abstract
Abstract
We report reversible bipolar resistance switching behaviors in transparent indium-tin oxide (ITO)/LaAlO3/SrTiO3 memristors at room temperature. The memristors exhibit high optical transparency, long retention, and excellent antifatigue characteristics. The high performances are promising for employing ITO/LaAlO3/SrTiO3 memristors in nonvolatile transparent memory and logic devices. The nonvolatile resistance switching behaviors could be attributed to the migration of positively charged oxygen vacancies from the SrTiO3 substrate to the LaAlO3 film, resulting in Poole-Frenkel emission for the low resistance state and thermionic emission for the high resistance state.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
References (26)
Show source-provided references
1. Wager J. F. · Science · 2003 · 300 · 124510.1126/science.1085276 ↗
2. Seo J. W. · Appl. Phys. Lett. · 2008 · 93 · 22350510.1063/1.3041643 ↗
3. Yao J. · Nat. Commun. · 2012 · 3 · 110110.1038/ncomms2110 ↗
4. Shang J. · Adv. Funct. Mater. · 2013 · 2 · 1002
5. Strukov D. B. · Nature · 2008 · 453 · 8010.1038/nature06932 ↗
6. Yang J. J. · Nat. Nanotechnol. · 2008 · 3 · 42910.1038/nnano.2008.160 ↗
7. Linn E. · Nat. Mater. · 2010 · 9 · 40310.1038/nmat2748 ↗
8. Lee M. J. · Nat. Mater. · 2011 · 10 · 62510.1038/nmat3070 ↗
9. Chanthbouala A. · Nat. Mater. · 2012 · 11 · 86010.1038/nmat3415 ↗
10. Wen Z. · Nat. Mater. · 2013 · 12 · 61710.1038/nmat3649 ↗
11. Liu D. · Appl. Phys. Lett. · 2013 · 102 · 13410510.1063/1.4800229 ↗
12. Szot K. · Nat. Mater. · 2006 · 5 · 31210.1038/nmat1614 ↗
13. Meijer G. I. · Science · 2008 · 319 · 162510.1126/science.1153909 ↗
14. Wu S. X. · Phys. Rev. X · 2013 · 3 · 041027
15. Shi L. · Appl. Phys. Express · 2009 · 2 · 10160210.1143/APEX.2.101602 ↗
16. Liua K.-C. · Microelectron. Eng. · 2011 · 88 · 158610.1016/j.mee.2010.11.021 ↗
17. Liu D.-Q. · IEEE Electron Device Lett. · 2013 · 34 · 150610.1109/LED.2013.2284927 ↗
18. Ohtomo A. · Nature · 2004 · 427 · 42310.1038/nature02308 ↗
19. Singh-Bhalla G. · Nat. Phys. · 2011 · 7 · 8010.1038/nphys1814 ↗
20. Mannhart J. · Science · 2010 · 327 · 160710.1126/science.1181862 ↗
21. Lin C.-Y. · J. Electrochem. Soc. · 2007 · 154 · G18910.1149/1.2750450 ↗
22. Sze S. M. · 2007
23. Kao K. C. · 2004
24. Hu W. · ACS Appl. Mater. Interfaces · 2014 · 6 · 501210.1021/am500048y ↗
25. Kwon D. H. · Nat. Nanotechnol. · 2010 · 5 · 14810.1038/nnano.2009.456 ↗
26. Liu D. · ACS Appl. Mater. Interfaces · 2013 · 5 · 1125810.1021/am403497y ↗