Site engineering in chemical solution deposited Na_1/2Bi_1/2TiO₃thin films using Mn acceptor

A series of Mn doped Na 1/2 Bi 1/2 TiO 3 (NBT) thin films with dopant concentrations from 0 to 4 at% (NBTMn x , x = 0, 0.01, 0.02, 0.04) were fabricated on the indium tin oxide/glass substrates by chemical solution deposition. The effects of Mn doping content on crystalline, ferroelectric and dielectric properties were investigated. All thin films exhibit phase-pure polycrystalline perovskite structures. For the insulating measurement, at low electric field, space charge limited conduction or a grain boundary limited behavior is responsible for the leakage behavior of NBTMn x thin films, whereas at the high electric field, the dominant mechanism is changed to the interface-limited Fowler–Nordheim tunneling except NBTMn 0.04 . The leakage current density is reduced by more than three orders of magnitude in NBTMn 0.02 compared with that of NBT thin film. Also, the enhanced ferroelectric properties of NBTMn 0.02 thin film can be observed in polarization–electric filed hysteresis loop with P r of 38 μ C cm −2 , which is consistent with the result of the normalized capacitance–voltage curve. The dielectric constant and dissipation factor of NBTMn 0.02 thin film are 501 and 0.04, respectively at 100 kHz. These electrical property improvements are attributed to the decrease of oxygen vacancy-induced leakage current.