journal article·2018-02-07

Directing Oxygen Vacancy Channels in SrFeO2.5 Epitaxial Thin Films

Amit Khare, Jaekwang Lee, Jaeseoung Park, Gi-Yeop Kim, Si-Young Choi, Takayoshi Katase, Seulki Roh, Tae Sup Yoo, Jungseek Hwang, Hiromichi Ohta, Junwoo Son, Woo Seok Choi

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Abstract

Transition-metal oxides (TMOs) with brownmillerite (BM) structures possess one-dimensional oxygen vacancy channels (OVCs), which play a key role in realizing high ionic conduction at low temperatures. The controllability of the vacancy channel orientation, thus, possesses a great potential for practical applications and would provide a better visualization of the diffusion pathways of ions in TMOs. In this study, the orientations of the OVCs in BM-SrFeO 2.5 are stabilized along two crystallographic directions of the epitaxial thin films. The distinctively orientated phases are found to be highly stable and exhibit a considerable difference in their electronic structures and optical properties, which could be understood in terms of orbital anisotropy. The control of the OVC orientation further leads to modifications in the hydrogenation of the BM-SrFeO 2.5 thin films. The results demonstrate a strong correlation between crystallographic orientations, electronic structures, and ionic motion in the BM structure.
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Research context

OpenAlex topics: Magnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides · Advancements in Solid Oxide Fuel Cells

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, Indian Institute of Science Education of Research (IISER), Bhopal 462 066, India

Department of Physics, Pusan National University, Pusan 46241, Republic of Korea

Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea

Materials Modeling and Characterization Department, Korea Institute of Materials Science, Changwon 51508, Republic of Korea

Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0020, Japan

Funding

National Research Foundation of Korea · Department of Science and Technology, Ministry of Science and Technology · Japan Society for the Promotion of Science · Network Joint Research Center for Materials and Devices

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