DataVXACS Applied Materials & InterfacesPaper
journal article·2017-11-15Open access

Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride

Lanlan Jiang, Yuanyuan Shi, Fei Hui, Kechao Tang, Qian Wu, Chengbin Pan, Xu Jing, Hasan Uppal, Felix Palumbo, Guangyuan Lu, Tianru Wu, Haomin Wang, Marco A. Villena, Xiaoming Xie, Paul C. McIntyre, Mario Lanza

ACS Applied Materials & Interfaces· Volume 9· Issue 45
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Source abstract

Abstract

Insulating films are essential in multiple electronic devices because they can provide essential functionalities, such as capacitance effects and electrical fields. Two-dimensional (2D) layered materials have superb electronic, physical, chemical, thermal, and optical properties, and they can be effectively used to provide additional performances, such as flexibility and transparency. 2D layered insulators are called to be essential in future electronic devices, but their reliability, degradation kinetics, and dielectric breakdown (BD) process are still not understood. In this work, the dielectric breakdown process of multilayer hexagonal boron nitride (h-BN) is analyzed on the nanoscale and on the device level, and the experimental results are studied via theoretical models. It is found that under electrical stress, local charge accumulation and charge trapping/detrapping are the onset mechanisms for dielectric BD formation. By means of conductive atomic force microscopy, the BD event was triggered at several locations on the surface of different dielectrics (SiO2, HfO2, Al2O3, multilayer h-BN, and monolayer h-BN); BD-induced hillocks rapidly appeared on the surface of all of them when the BD was reached, except in monolayer h-BN. The high thermal conductivity of h-BN combined with the one-atom-thick nature are genuine factors contributing to heat dissipation at the BD spot, which avoids self-accelerated and thermally driven catastrophic BD. These results point to monolayer h-BN as a sublime dielectric in terms of reliability, which may have important implications in future digital electronic devices.
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Research context

Nanomaterials

OpenAlex topics: Graphene research and applications · Semiconductor materials and devices · Thermal properties of materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nanoscience & Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123, China

Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States

Microelectronics and Nanostructures, The University of Manchester, Sackville Street, Manchester M13 9PL, U.K.

National Scientific and Technical Research Council (CONICET), UTN-CNEA, Godoy Cruz 2290, Buenos Aires, Argentina

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China

School of Physical Science and Technology, ShanghaiTech University, 319 Yueyang Road, Shanghai 201210, China

Funding

Ministry of Education of the People's Republic of China · Ministry of Science and Technology of the People's Republic of China · Consejo Nacional de Investigaciones Cient?ficas y T?cnicas · Universidad Tecnol?gica Nacional · Government of Jiangsu Province · Ministry of Finance · National Natural Science Foundation of China · Collaborative Innovation Center of Suzhou Nano Science and Technology · Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University · Priority Academic Program Development of Jiangsu Higher Education Institutions

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