journal article·2020-01-15

A comprehensive study on the structural, morphological, compositional and optical properties of ZnxCd1−xS thin films

Biswajit Barman, Kasturi V Bangera, G K Shivakumar

Materials Research Express· Volume 6· Issue 12
Publisher page

Abstract

The absorption loss in cadmium sulfide (CdS) thin films which are widely used as a window layer in a photovoltaic cell limits the efficiency of the device. This issue can be addressed by Zn x Cd 1−x S thin films due to its tunable band gap nature. Herein, the various composition of Zn x Cd 1−x S (x=0, 0.15, 0.30, 0.45, 0.70, 0.85, 1) thin films were grown by a vacuum thermal evaporation technique and the characteristics of the films were investigated by varying the composition ‘x’. The x-ray diffraction (XRD) studies displayed that the as-deposited films consist of diffraction peaks from both CdS and ZnS lattice. The formation of ternary Zn x Cd 1−x S films was verified when the deposited films were subjected to an annealing treatment. The morphology of the films was analyzed using a scanning electron microscope (SEM) and it was observed that the films are uniform, homogeneous and free from any pin-holes and cracks. The presence of Zn, Cd and S elements were quantized using an energy dispersive spectroscopy. Optical studies showed a successful non-linear band gap engineering (2.42–3.49 eV) for the deposited Zn x Cd 1−x S thin films. All films showed a very high optical transmittance of above 70% in the visible wavelength region.
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Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications

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References (31)

Show source-provided references
1. 10.1016/j.nantod.2010.06.00910.1016/j.nantod.2010.06.009 ↗
2. 10.1021/ja208337r10.1021/ja208337r ↗
3. 10.1038/natrevmats.2017.7010.1038/natrevmats.2017.70 ↗
4. 10.1080/0950034070129272010.1080/09500340701292720 ↗
5. 10.1016/j.tsf.2005.11.08210.1016/j.tsf.2005.11.082 ↗
6. 10.1016/j.ijleo.2015.12.08310.1016/j.ijleo.2015.12.083 ↗
7. 10.1002/pssb.20030421810.1002/pssb.200304218 ↗
8. 10.1016/0169-4332(93)90599-710.1016/0169-4332(93)90599-7 ↗
9. 10.1016/j.tsf.2013.10.02410.1016/j.tsf.2013.10.024 ↗
10. Mahdi M A · Int. J. Nanoelectron. Mater. · 2012 · 5 · 11
11. 10.1016/j.apsusc.2010.09.02710.1016/j.apsusc.2010.09.027 ↗
12. 10.1016/j.matlet.2005.06.03110.1016/j.matlet.2005.06.031 ↗
13. Asogwa P U · Chalcogenide Lett. · 2010 · 7 · 501
14. Rajathi S · Chalcogenide Lett. · 2012 · 9 · 495
15. 10.1016/j.solener.2009.06.00410.1016/j.solener.2009.06.004 ↗
16. 10.1063/1.494667510.1063/1.4946675 ↗
17. 10.1063/1.360617710.1063/1.3606177 ↗
18. 10.1016/j.ijhydene.2009.12.09010.1016/j.ijhydene.2009.12.090 ↗
19. 10.1016/j.optmat.2013.09.00310.1016/j.optmat.2013.09.003 ↗
20. 10.1016/j.ijleo.2016.05.03010.1016/j.ijleo.2016.05.030 ↗
21. 10.1016/S0040-6090(03)00526-110.1016/S0040-6090(03)00526-1 ↗
22. 10.1016/S0927-0248(02)00164-210.1016/S0927-0248(02)00164-2 ↗
23. 10.1155/2011/96921410.1155/2011/969214 ↗
24. 10.1016/j.optmat.2004.04.00810.1016/j.optmat.2004.04.008 ↗
25. 10.1515/msp-2015-009610.1515/msp-2015-0096 ↗
26. 10.1016/j.jallcom.2006.11.00910.1016/j.jallcom.2006.11.009 ↗
27. 10.1016/j.spmi.2018.09.03010.1016/j.spmi.2018.09.030 ↗
28. 10.1016/j.jallcom.2018.09.19210.1016/j.jallcom.2018.09.192 ↗
29. 10.1016/0022-3093(72)90194-910.1016/0022-3093(72)90194-9 ↗
30. Dzhafarov T D · J. Phys. D: Appl. Phys. · 2006 · 39 · 322110.1088/0022-3727/39/15/001 ↗
31. 10.1016/j.spmi.2019.10634910.1016/j.spmi.2019.106349 ↗