Interface-Engineered Resistive Switching: CeO2 Nanocubes as High-Performance Memory Cells
Source abstract
Abstract
We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-switching memory device. The device was found to exhibit excellent bipolar resistive-switching characteristics with a high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 10(4), better uniformity, and stability up to 480 K. The presence of oxygen vacancies and their role was discussed to explain the resistive-switching phenomenon in the fabricated devices. Further, the effect of the film thickness on carrier concentrations and estimated electric field strength with the switching (OFF/ON) ratio were also discussed.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 New South Wales, Australia
Australian Nuclear Science and Technology Organization, New Illawarra Road, Lucas Heights, 2234 New South Wales, Australia
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