journal article·2014-04-23

Piezotronic Effect on ZnO Nanowire Film Based Temperature Sensor

Fei Xue, Limin Zhang, Wei Tang, Chi Zhang, Weiming Du, Zhong Lin Wang

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Abstract

In this work, we demonstrated the first study of piezotronic effect as a potential means for measuring temperature by utilizing ZnO nanowire (NW) film. The film was synthesized by the wet chemical deposition method and transferred to a flexible substrate using photoresist. The primary role of piezotronic effect over geometrical and piezoresistive effect in the as-fabricated devices has been confirmed, and piezotronic effect on charge carrier transportation under different strains is subsequently studied. In addition, we also presented that the temperature sensing capability of as-fabricated NW film based piezotronic devices can be tuned by piezopotential, which exhibits dramatically enhanced sensitivity. A theoretical model is proposed to interpret the observed behaviors of the sensor. This study provides an effective method to fabricate temperature sensors with higher performance based on piezotronic effect in the future.
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Research context

OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Gas Sensing Nanomaterials and Sensors · Advanced Thermoelectric Materials and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China

School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

References (29)

Show source-provided references
1. Wang Z. L. · Science · 2006 · 312 · 24210.1126/science.1124005 ↗
2. Espinosa H. D. · Adv. Mater. · 2012 · 24 · 465610.1002/adma.201104810 ↗
3. Su W. S. · Appl. Phys. Lett. · 2007 · 90 · 06311010.1063/1.2472539 ↗
4. Wang Z. L. · Adv. Mater. · 2007 · 19 · 88910.1002/adma.200602918 ↗
5. Zhou J. · Nano Lett. · 2008 · 8 · 303510.1021/nl802367t ↗
6. Wang X. D. · Nano Lett. · 2006 · 6 · 276810.1021/nl061802g ↗
7. Wu W. · Science · 2013 · 340 · 95210.1126/science.1234855 ↗
8. Pan C. F. · ACS Nano · 2013 · 7 · 180310.1021/nn306007p ↗
9. Niu S. · Adv. Mater. · 2013 · 25 · 370110.1002/adma.201301262 ↗
10. Yu R. · Energy Environ. Sci. · 2013 · 6 · 49410.1039/c2ee23718k ↗
11. Allen J. E. · Adv. Mater. · 2009 · 21 · 306710.1002/adma.200803865 ↗
12. Perea D. E. · Nat. Nanotechnol. · 2009 · 4 · 31510.1038/nnano.2009.51 ↗
13. Wen X. · Adv. Mater. · 2013 · 25 · 337110.1002/adma.201300296 ↗
14. Freer E. M. · Nat. Nanotechnol. · 2010 · 5 · 52510.1038/nnano.2010.106 ↗
15. McMurran J. · Appl. Phys. Lett. · 1999 · 74 · 88310.1063/1.123398 ↗
16. Lu J. G. · J. Cryst. Growth · 2007 · 299 · 110.1016/j.jcrysgro.2006.10.251 ↗
17. Wei Y. · Nano Lett. · 2010 · 10 · 341410.1021/nl1014298 ↗
18. Ilican S. · J. Optoelectron. Adv. Mater. · 2008 · 10 · 2578
19. Tominaga K. · Thin Solid Films · 1998 · 334 · 3510.1016/S0040-6090(98)01112-2 ↗
20. Carcia P. F. · Appl. Phys. Lett. · 2003 · 82 · 111710.1063/1.1553997 ↗
21. Chen Y. F. · J. Cryst. Growth · 1997 · 181 · 16510.1016/S0022-0248(97)00286-8 ↗
22. Hughes W. C. · J. Vac. Sci. Technol. B · 1995 · 13 · 157110.1116/1.588189 ↗
23. Emanetoglu N. W. · Mater. Sci. Semicond. Process. · 1999 · 2 · 24710.1016/S1369-8001(99)00022-0 ↗
24. Nakamura S. · Appl. Phys. Lett. · 1991 · 58 · 202110.1063/1.105239 ↗
25. Chen L.-Y. · J. Phys. Chem. C · 2011 · 115 · 2091310.1021/jp2056199 ↗
26. Vayssieres L. · Adv. Mater. · 2003 · 15 · 46410.1002/adma.200390108 ↗
27. Gao Y. · Nano Lett. · 2009 · 9 · 110310.1021/nl803547f ↗
28. Zhang Y. · Adv. Mater. · 2011 · 23 · 300410.1002/adma.201100906 ↗
29. Size S. M. · 1981