High-Performance Ammonia Plasma-Processed CsPbBr₃ Perovskite Photodetectors

The pursuit of defect-suppressed metal halide perovskite films with optimal optoelectronic properties remains a persistent challenge in semiconductor device engineering. In this study, the effects of NH 3 plasma on the fabrication of high-quality CsPbBr 3 perovskite films are evaluated systematically. NH 3 plasma generates NH 2 and NH species, which enhance grain growth and reduce defect states. As a result, the trap density decreases significantly from 7.9 × 10 12 cm –3 to 6.8 × 10 11 cm –3, improving CsPbBr 3 film quality. The photodetector assembled with the NH 3 plasma-processed CsPbBr 3 film delivers outstanding performance, including a responsivity of 62.7 A/W, detectivity of 7.7 × 10 12 Jones, ultrafast response time of 0.1/0.3 ms, and exceptional stability, all of which surpass the metrics of the non-plasma-treated device. These findings offer a promising solution for enhancing the quality of CsPbBr 3 perovskite films, thereby improving the properties of optoelectronic devices.