Fabrication of antiferroelectric PLZT films on metal foils

Abstract Fabrication of high-dielectric-strength antiferroelectric (AFE) films on metallic foils is technically important for advanced power electronics. To that end, we have deposited crack-free Pb 0.92 La 0.08 Zr 0.95 Ti 0.05 O 3 (PLZT 8/95/5) films on nickel foils by chemical solution deposition. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, a conductive buffer layer of lanthanum nickel oxide (LNO) was coated by chemical solution deposition on the nickel foil before the deposition of PLZT. Use of the LNO buffer allowed high-quality film-on-foil capacitors to be processed in air. With the PLZT 8/95/5 deposited on LNO-buffered Ni foils, we observed field- and thermal-induced phase transformations of AFE to ferroelectric (FE). The AFE-to-FE phase transition field, E AF = 225 kV/cm, and the reverse phase transition field, E FA = 190 kV/cm, were measured at room temperature on a ≈1.15 μm-thick PLZT 8/95/5 film grown on LNO-buffered Ni foils. The relative permittivities of the AFE and FE states were ≈600 and ≈730, respectively, with dielectric loss ≈0.04 at room temperature. The Curie temperature was ≈210 °C. The thermal-induced transition of AFE-to-FE phase occurred at ≈175 °C. Breakdown field strength of 1.2 MV/cm was measured at room temperature.