AgSb(SxSe1−x)2 thin films for solar cell applications

Abstract Silver antimony sulfoselenide (AgSb(S x Se 1− x ) 2 ) thin films were prepared by heating glass/Sb 2 S 3 /Ag layers after selenization using sodium selenosulphate solution. First, Sb 2 S 3 thin films were deposited on glass substrates from a chemical bath containing SbCl 3 and Na 2 S 2 O 3 . Then Ag thin films were thermally evaporated onto glass/Sb 2 S 3 , followed by selenization by dipping in an acidic solution of Na 2 SeSO 3 . The duration of selenium dipping was varied as 30 min and 2 h. The heating condition was at 350 °C for 1 h in vacuum. Analysis of X-ray diffraction pattern of the thin films formed after heating showed the formation of AgSb(S x Se 1− x ) 2 . Morphology and elemental analysis were done by scanning electron microscopy and energy dispersive X-ray detection. Depth profile of composition of the thin films was performed by X-ray Photoelectron Spectroscopy. The spectral study showed the presence of Ag, Sb, S, and Se, and the corresponding binding energy analysis confirmed the formation of AgSb(S x Se 1− x ) 2 . Photovoltaic structures (PV) were prepared using AgSb(S x Se 1− x ) 2 thin films as absorber and CdS thin films as window layers on FTO coated glass substrates. The PV structures were heated at 60–80 °C in air for 1 h to improve ohmic contact. Analysis of J–V characteristics of the PV structures showed V oc from 230 to 490 mV and J sc 0.28 to 5.70 mA/cm 2 , under illumination of AM1.5 radiation using a solar simulator.