Effect of hydrogen annealing on the resistive switching characteristics of BiMnO 3 thin films
Source abstract
Abstract
Abstract Resistive random access memory (RRAM) has attracted considerable attention due to its low operation voltage, rapid switching speed and simple structure for the next-generation memory. Herein, polycrystalline BiMnO 3 (BMO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition. BMO thin films annealed in a hydrogen atmosphere (HBMO) exhibited a high leakage current with a ferroelectric hysteresis loop, which can be typically observed in ferroelectric thin films with increasing concentration of oxygen vacancies. In terms of the resistive switching characteristics of BMO and HBMO thin films, it is confirmed that the hydrogen annealing process makes it possible to reduce the SET and RESET voltages and clarify the difference between high-resistance and low-resistance states.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Ferroelectric and Piezoelectric Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (21)
Show source-provided references
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