Improvement of third-order NLO properties of vacuum deposited Cd1-xPbxS nanostructured thin films for optoelectronic device applications

A polycrystalline nanostructured cadmium lead sulfide thin film was deposited using the thermal evaporation (PVD) technique (Cd 1-x Pb x S with x = 0.00, 0.01, 0.05 and 0.1 wt.% of Pb). Structural parameters of as-prepared Cd 1-x Pb x S thin films have been studied through X-ray diffraction. The optical investigation demonstrates that Cd 1-x Pb x S film's optical band gap (E g ) may be adjusted from the visible to the near-infrared region. (2.64 - 2.42 eV). The film is substantially more appropriate for absorbing layers in solar cells and optoelectronic applications due to the large decrease in ‘E g .’ The enhanced Pb doping was found to have altered the surface morphology, verified by Field Emission Scanning Electron Microscopy (FESEM) images. The doped films also showed a significant red shift in the band edge and increased transmittance in the visible and NIR regions. The third-order nonlinear optical (TONLO) parameters of the samples were determined from the Q-switched Nd: YAG laser with 65-ps pulse duration at 1064 nm. The investigated TONLO components such as nonlinear absorption coefficient (β), nonlinear refractive index ( n 2 ) and the susceptibility χ ( 3 ) were found to be in the range from 1.16 × 10 −3 to 4.12 × 10 −3 (cmW −1 ), 1.06 × 10 −8 to 3.32 × 10 −8 (cm 2 W −1 ) and 1.23 × 10 −4 to 5.62 × 10 −4 (esu) respectively. The results indicate that Pb-doping on CdS nanostructures on surface morphology can be used to modify NLO characteristics.Cd 1-x Pb x S thin film is a potential and able material for optoelectronic device applications, as seen by these encouraging NLO results.