Effect of O2/Ar flow ratio on Ga and Al co-doped ZnO thin films by rf sputtering for optoelectronic device fabrication
Source abstract
Abstract
Abstract Ga and Al co-doped ZnO thin films were prepared on glass substrates by radio frequency magnetron sputtering and the effect of O 2 /Ar flow ratio on their physical properties was investigated. The films exhibited a hexagonal wurtzite structure with a predominant (002) peak intensity and their crystallinity improved with O 2 /Ar flow ratio. Raman spectroscopy confirmed the films’ wurtzite structure and revealed a decrease in residual tensile stress and charge carrier concentration with increasing O 2 /Ar flow ratio. Low surface roughness resulted in high optical transmittances around 85–90% in the visible region. The Urbach energy decreased with increasing O 2 /Ar flow ratio indicating a reduction in structural disorders. This was consistent with Raman spectroscopy and X-ray diffraction analysis. The least electrical resistivity ( 2.6 × 10 1 Ω cm ) and highest figure of merit (8.8 × 10 −6 Ω −1 ) for films prepared with oxygen admittance were obtained at 0.667 O 2 /Ar flow ratio, indicating their suitability in optoelectronic device fabrication.
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Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (54)
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1. Investigation of the electronic and optical properties in Al?Ga codoped ZnO thin films10.1016/j.cap.2011.09.008 ↗
2. Effect of gallium doping on the structural, optical and electrical properties of zinc oxide thin films prepared by spray pyrolysis10.1016/j.ceramint.2016.03.110 ↗
3. Effect of doping concentration on the properties of aluminium doped zinc oxide thin films prepared by spray pyrolysis for transparent electrode applications10.1016/j.ceramint.2010.09.042 ↗
4. Synthesis and characterization of zinc oxide thin films for optoelectronic applications10.1016/j.heliyon.2017.e00285 ↗
5. Structural, electrical and optical properties of ZnO thin films deposited by sol-gel method10.1016/j.mejo.2008.06.085 ↗
6. Resistivity stability of Ga doped ZnO thin films with heat treatment in air and oxygen atmospheres
7. Physical properties of ZnO thin films deposited at various substrate temperatures using spray pyrolysis10.1016/j.physb.2010.02.016 ↗
8. Optimisation of ZnO:Al films by change of sputter gas pressure for solar cell application10.1016/S0169-4332(02)00611-6 ↗
9. Post-annealed gallium and aluminium co-doped zinc oxide films applied in organic photovoltaic devices10.1186/1556-276X-9-562 ↗
10. Effect of working pressure on the characteristics of Ga-Al doped ZnO thin films deposited by the facing targets sputtering method
11. Influence of the deposition pressure on the properties of transparent and conducting ZnO:Ga thin-film produced by rf sputtering at room temperature10.1016/S0040-6090(02)01184-7 ↗
12. RF magnetron sputtered ZnO:Al thin films on glass substrates: a study of damp heat stability on their optical and electrical properties10.1016/j.solmat.2007.07.008 ↗
13. The annealing effect on damp heat stability of AGZO thin films prepared by DC moving magnetron sputtering10.1016/j.cap.2011.01.014 ↗
14. In-line sputtered gallium and aluminium codoped zinc oxide films for organic solar cells
15. Physical properties of gallium and aluminium co-doped zinc oxide thin films deposited at different radio frequency magnetron sputtering power10.1016/j.ceramint.2016.08.091 ↗
16. Low temperature synthesis of radio frequency magnetron sputtered gallium and aluminium co-doped zinc oxide thin films for transparent electrode fabrication10.1016/j.apsusc.2016.08.081 ↗
17. Investigation of aluminium-gallium co-doped zinc oxide targets for sputtering thin film and photovoltaic application10.1016/j.jallcom.2013.04.075 ↗
18. Comparative study of highly dense aluminium- and gallium-doped zinc oxide transparent conducting sol–gel thin films10.1007/s12034-014-0068-4 ↗
19. Sol-gel derived Al and Ga co-doped ZnO thin films: an optoelectronic study10.1016/j.apsusc.2013.11.062 ↗
20. Characteristics of gallium and aluminium Co-doped ZnO (GAZO) transparent thin films deposited by using the PLD process10.3938/jkps.55.947 ↗
21. Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum level10.1016/j.mejo.2008.06.081 ↗
22. Directed spatial organization of zinc oxide nanorods10.1021/nl048322e ↗
23. Effect of oxygen flow rate on the ultraviolet sensing properties of zinc oxide nanocolumn arrays grown by radio frequency magnetron sputtering10.1016/j.ceramint.2015.11.083 ↗
24. Structural and optical characterization of high-quality ZnO thin films deposited by reactive RF magnetron sputtering10.1016/j.materresbull.2012.11.104 ↗
25. Effect of oxygen flow rate and radio-frequency power on the photoconductivity of highly ultraviolet sensitive ZnO thin films grown by magnetron sputtering10.1016/j.materresbull.2011.07.019 ↗
26. Controlled texture of reactively rf-sputtered ZnO thin films10.1063/1.325158 ↗
27. Effect of the flow rate of oxygen and hydrogen gases on the characteristics of organic light emitting diodes with Al-doped ZnO anodes10.1007/s13391-013-3178-z ↗
28. Effects of oxygen addition on physical properties of ZnO thin film grown by radio frequency reactive magnetron sputtering10.1016/j.jallcom.2010.10.037 ↗
29. Warren · 1990
30. Comparative studies of Al-doped ZnO and Ga-doped ZnO transparent conducting oxide thin films10.1186/1556-276X-7-639 ↗
31. Optical and electrical properties of the different magnetron sputter power 300°C deposited Ga2O3-ZnO thin films and applications in p-i-n α-Si:H thin-film solar cells
32. Pearson · 1972
33. Structural properties of zinc oxide thin films prepared by rf magnetron sputtering10.1016/S0921-5107(02)00406-3 ↗
34. Structural, morphological and optical properties of sol gel processed CdZnO nanostructured films: effect of precursor solvents10.1186/2228-5326-3-57 ↗
35. Origin of the phonon frequency shifts in ZnO quantum dots10.1063/1.1861509 ↗
36. Micro-Raman investigation of optical phonons in ZnO nanocrystals
37. Raman spectroscopy study of ZnO-based ceramic films fabricated by novel sol-gel process10.1016/S0921-5107(02)00396-3 ↗
38. Raman study of oriented ZnO thin films deposited by sol-gel method, Spectrochim10.1016/j.saa.2008.03.032 ↗
39. MOCVD growth of ZnO films on Si(111) substrate using a thin AIN buffer layer10.1016/j.jcrysgro.2005.06.058 ↗
40. High-pressure Raman spectroscopy study of wurtzite ZnO10.1103/PhysRevB.65.092101 ↗
41. The structural and optical properties of ZnO thin films prepared at different RF sputtering power10.1016/j.jksus.2012.12.004 ↗
42. Influence of rf power on structural morphology, electrical, composition and optical properties of Al-doped ZnO films deposited by rf magnetron sputtering10.1007/s10854-015-3862-x ↗
43. Effects of oxygen/argon ratio and annealing on structural and optical properties of ZnO thin films10.1016/j.apsusc.2012.02.088 ↗
44. Dependency of oxygen partial pressure on the characteristics of ZnO films grown by radio frequency magnetron sputtering10.1007/s10854-007-9401-7 ↗
45. Influence of substrate temperature and oxygen/argon flow ratio on the electrical and optical properties of Ga-doped ZnO thin films prepared by rf sputtering10.1002/crat.200610748 ↗
46. Optical properties and electronic structure of amorphous germanium10.1002/pssb.19660150224 ↗
47. Optimization of preparation technology of ZnO and ZnO: Al thin films for solar cell applications10.1002/pssc.201400364 ↗
48. Optical constants of ZnO10.1143/JJAP.36.6237 ↗
49. Dielectric function of zinc oxide thin films in a broad spectral range10.1016/j.tsf.2014.02.004 ↗
50. Effect of oxygen partial pressure contents on the properties of Al-doped ZnO thin films prepared by radio frequency sputtering
51. Thermal effects on the structural, electrical and optical properties of Al-doped ZnO films deposited on glass substrates
52. Oxygen vacancy induced band gap narrowing of ZnO nanostructures by an electrochemically active biofilm10.1039/c3nr02678g ↗
53. The role of oxygen and hydrogen partial pressures on structural and optical properties of ITO films deposited by reactive rf-magnetron sputtering10.1016/j.apsusc.2007.01.107 ↗
54. New figure of merit for transparent conductors10.1063/1.323240 ↗