High-temperature anomalies of dielectric constant in TiO2 thin films

Abstract Anatase and rutile TiO 2 thin films were prepared by chemical vapor deposition with precursors Ti(OPr i ) 4 and Ti(dpm) 2 (OPr i ) 2 (dpm = 2,2,6,6-tetramethylheptane-3,5-dione and Pr i = isopropyl), respectively. The dielectric properties of TiO 2 thin films have been studied in 20–1100 K temperature range in air, in controlled Ar/O 2 atmospheres, and in vacuum with silicon-based metal-insulator-semiconductor Au/TiO 2 /Si capacitors. High-temperature ( T c ∼ 980 K) anomalous behavior of dielectric constant was observed in both anatase and rutile TiO 2 thin films.