Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils

Abstract We have grown ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films on platinized silicon and LaNiO3-buffered nickel substrates by chemical solution deposition using a sol–gel process based on acetic acid chemistry. The following measurements were obtained under zero-bias field: relative permittivity of ≈960 and dielectric loss of ≈0.04 on the PLZT film grown on Pt/Si substrates, and relative permittivity of ≈820 and dielectric loss of ≈0.06 on the PLZT film grown on LNO-buffered Ni substrates. In addition, a relative permittivity of 125 and dielectric loss of 0.02 were measured at room temperature under a high bias field of 1 × 106 V/cm on PLZT deposited on LNO-buffered nickel substrate. Furthermore, a steady-state leakage current density of ≈8.1 × 10−9 A/cm2 and mean breakdown field strength of 1.7 × 106 V/cm were measured at room temperature. Finally, remanent polarization (Pr) of ≈2.0 × 10−5 C/cm2, coercive electric field (Ec) of ≈3.4 × 104 V/cm, and energy density of ≈45 J/cm3 were determined from room-temperature hysteresis loop measurements on PLZT/LNO/Ni film-on-foil capacitors with 250-μm-diameter platinum top electrodes.