Preparation and electrical properties of bismuth layer-structured ceramic Bi3NbTiO9 solid solution

Abstract Bi 3 NbTiO 9 (BNT) ceramic materials with the density ratios of 95–97% to the theoretical density were prepared by the conventional mixed-oxide method. The Curie temperature ( T c ), 914 °C was found to be almost the highest one among those of all the ceramics known to date. The crystal structure of the ceramic was investigated by X-ray diffraction method. Anisometric plate-like crystalline grains were observed, which revealed the layered structure of the material. The temperature dependence of the electrical resistivity was measured. For the first time the dielectric properties of Bi 3 NbTiO 9 in the vicinity of its transition temperature were measured. Finally, the hysteresis ( P – E ) loop measurement showed a good ferroelectricity in the Bi 3 NbTiO 9 ceramics, and the piezoelectric constant (d 33 ) was found to be 7 pC/N.