Effects of crystalline structure of IGZO thin films on the electrical and photo-stability of metal-oxide thin-film transistors
Source abstract
Abstract
Abstract In this paper, we investigated the effects of crystalline structure of indium-gallium-zinc-oxide (IGZO) thin films on the electrical and photo-stability of metal-oxide thin-film transistors (TFTs). It was found that the TFTs with c-axis aligned crystalline (CAAC) IGZO channels exhibited enhanced stability under various combinations of electrical, temperature, and light-stressed conditions compared to those with amorphous (a) and nanocrystalline (nc) IGZO channels. From various electrical and spectroscopic studies, it is suggested that the low deep-level defects in CAAC-IGZO channels allowed high electrical performance and enhanced stability. Meanwhile, the a- and nc-IGZO TFTs showed relatively poor stability owing to the higher levels of deep-level defects in the channel layers. To explain the origin of the enhanced light-stability in CAAC-IGZO TFTs, we investigated the transient photo-response characteristics and it was found that the low activation energy for recombination and/or neutralization of photo-generated carriers was responsible for the enhanced stability.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · CCD and CMOS Imaging Sensors · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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