Thin film solar cell based on CuSbS 2 absorber prepared by chemical bath deposition (CBD)
Source abstract
Abstract
Abstract CuSbS 2 has been proposed as an alternative to other absorber materials, such as CIGS, because it’s an earth abundant, low cost and nontoxic material; also, its suitable band gap and high absorption coefficient has a potential application in photovoltaic devices. This work reports the CuSbS 2 thin films preparation and characterization, grown by a one-step chemical bath deposition using thin films which were heat treated at 350, 380 and 400 °C. X-ray diffraction analysis showed the formation of orthorhombic CuSbS 2 after the films heating. The band gap energy value of the CuSbS 2 decreased from 1.96 to 1.54 eV due to the heat treatment at 350–400 °C. The CuSbS 2 films showed p -type conductivity and XPS spectrum shows the oxidation states of the elements in the obtained thin films. The films which were heat treated at 380 °C showed a good crystalline and improved phase purity. The material was incorporated into a SnO 2 :F/CdS/Sb 2 S 3 /CuSbS 2 /C:Ag structure to evaluate its potential application as absorber in a solar cell achieving an encouraging 0.66% of conversion efficiency with 0.382 V of Voc, 5.32 mA/cm 2 of Jsc and 32% of FF.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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