A comparative study of ferroelectric triglycine sulfate (TGS) crystals grown by conventional slow evaporation and unidirectional method

Abstract Unidirectional 〈0 1 0〉 TGS single crystal of diameter 35 mm and length 80 mm was grown by Sankaranarayanan–Ramasamy (SR) method. Nearly two times higher d 33 value has been obtained for the SR grown TGS crystal compared to conventional grown TGS. The etch pit density of SEST and SR method grown TGS crystal is 2.1 × 10 2 cm −2 and 1.5 × 10 2 cm −2 respectively. The values of hardness were found to be 152 kg/mm 2 for SR grown TGS and 108 kg/mm 2 for SEST grown TGS crystal. The average laser damage threshold obtained on the SEST grown TGS crystal was 29 mJ/cm 2 whereas a high damage threshold of 39 mJ/cm 2 was obtained for the SR grown crystal. The SR method grown TGS has 5% higher transmittance as against conventional method grown crystal. Dielectric study showed higher dielectric permittivity and lower dielectric loss in SR grown TGS crystal.