journal article·2026-10

Extended gate-controlled transport in MAPbI₃ field-effect transistors via toluene treatment

Byoungnam Park

Materials Letters· Volume 420
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Abstract

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Research context

OpenAlex topics: Perovskite Materials and Applications · 2D Materials and Applications · Thin-Film Transistor Technologies

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References (7)

Show source-provided references
1. Switched-on: progress, challenges, and opportunities in metal halide perovskite transistors10.1002/adfm.202101029 ↗
2. Interfacial charge transport in MAPbI3 perovskite on ZnO10.1016/j.rinp.2019.102207 ↗
3. Organic–inorganic hybrid perovskite materials and their application in transistors10.1039/D3QM00697B ↗
4. Ion migration in 3D metal halide perovskite field effect transistors10.1002/elt2.28 ↗
5. Interfacial energy band bending and carrier trapping at the vacuum-deposited MAPbI3 perovskite/gate dielectric interface10.1016/j.rinp.2018.08.043 ↗
6. Ion migration in metal halide perovskite field-effect transistors10.1021/acsaelm.3c01394 ↗
7. A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors10.1126/sciadv.aaz4948 ↗