Solution-Processed TiO₂/ZnFe₂O₄ Heterostructure for Stable Multilevel Memristor with Room-Temperature Reactive Gas Selectivity

Solution-processed oxide-based heterojunctions that work in diverse directions will be ideal alternatives for cost-effective, stable, and multifunctional devices. Here, we have reported a stable multilevel resistive switching (RS) at the solution-processed TiO 2 /ZnFe 2 O 4 heterointerface with endurance stability over 10 4 cycles and retention over 10 5 s. It can maintain the switching after dripping water onto the device, followed by drying at 100 °C and at an operating temperature of up to 200 °C. As the switching mechanism is governed by filamentary and interface-dominated charge conduction, our device shows additional tunability in the low resistance state (LRS) by changing environmental conditions. The inability to form filaments results in almost negligible switching under a vacuum or inert environment with an LRS loss. Meanwhile, the presence of reducing gas leads to a depletion layer lowering at the TiO 2 /ZnFe 2 O 4 heterointerface by removing the surface-adsorbed oxygen molecules that help filament conduction through the interface and, hence, a change in LRS. Furthermore, different reaction capacities of different reactive gas environments with the surface-adsorbed oxygen molecule lead to discrete ON–OFF ratios, presenting a pathway to identify several reactive vapors like ammonia, formaldehyde, and acetone at room temperature and presenting a new approach for integrating RS and room temperature gas sensing in the multifunctional device technology.