Electrical Performance and Deep-Level Trap Characterization of p-CuGaO2/β-Ga2O3 Heterojunctions for Power Electronics
Source abstract
Abstract
Abstract The development of β-Ga2O3-based power devices is hindered by the absence of effective p-type doping, limiting the realization of high-performance bipolar devices. In this study, we investigate the electrical characteristics and deep-level trap states of p-CuGaO2/β-Ga2O3 heterojunction (HJ), offering a promising alternative for power electronics. Electrical characterization of the p-CuGaO2/β-Ga2O3 HJ reveals a reduced Von and lower Ron compared to a Pt/β-Ga2O3 SBD. Notably, the HJ exhibits a maximum breakdown voltage of 1.054 kV. Analysis of the interface state density (NSS) demonstrates a significant reduction in NSS at the Pt/β-Ga2O3 interface due to the p-CuGaO2 interlayer. DLTS was employed to identify and distinguish majority carrier traps in both the SBD and HJ structures. In the SBD, dominant electron trap levels were observed at EC–0.757 eV (1.5 × 1012 cm–3) and EC–1.332 eV (2.6 × 1013 cm–3). The HJ exhibited trap levels at EC–0.268 eV (8.6 × 1011 cm–3), EC-0.857 eV (2.1 × 1012 cm–3), and EC-2.169 eV (3.3 × 1013 cm–3). The observed modulation of trap characteristics through p-CuGaO2 integration offers promising avenues for optimizing β-Ga2O3 power device performance and reliability for power electronics applications.
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Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Sejong University , , ,
Kwangwoon University , , ,
QIS College of Engineering and Technology , , Vegamukkapalem , , ,
University of Southern Denmark , , Alison 2 , ,
Funding
Ministry of Science and ICT, South Korea · Korea Institute of Energy Technology Evaluation and Planning
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