journal article·2024-10-09

Narrowband Solar-Blind Photodetection of the Plasmonic (In0.3Ga0.7)2O3 Detector via the Synergetic Enhancement of Small-Sized Ag-Nanoparticle Photoabsorbance and Surface Modification

Lincong Shu, Shulin Sha, Jia-Han Zhang, Shaohui Zhang, Jinjin Wang, Xueqiang Ji, Shan Li, Mingming Jiang, Weihua Tang, Zeng Liu

ACS Applied Materials & Interfaces· Volume 16· Issue 40
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Abstract

Currently, research on Ag nanoparticles (AgNPs) predominantly focuses on UV/visible photodetection and UV emission, seemingly overlooking the significance of Ag in enhancing deep ultraviolet photon detection. In this work, (In 0.3 Ga 0.7 ) 2 O 3 thin films were fabricated by plasma-enhanced chemical vapor deposition. Due to the unique photoabsorbance characteristic and better interaction with photons of small-sized AgNPs, they effectively suppress the UVB absorbance caused by energy band engineering in the (In 0.3 Ga 0.7 ) 2 O 3 thin film while enhancing photoabsorbance in UVC due to the surface plasmon effect. Therefore, under the synergistic effect of enhanced photon absorbance and hot electron transfer, the performance of the detector is significantly improved, and its responsivity ( R ), external quantum efficiency, and detectivity ( D *) are 193 mA/W, approximately 100%, and 10 14 Jones, respectively, at a bias of −6 V. The fast response time and decay time are 634.6 and 194.1 ms, respectively; the rapid decay facilitated by AgNPs is attributed to the increased indirect recombination rate. AgNPs exhibit excellent narrowband response characteristics and absorbance properties in specific wavelength bands for the InGaO photodetector. This research lays the foundation for the practical application of localized surface plasmon resonance-enhanced photon-sensing capabilities.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People’s Republic of China

College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, People’s Republic of China

Inner Mongolia Key Laboratory of Intelligent Communication and Sensing and Signal Processing, School of Electronic Information Engineering, Inner Mongolia University, Hohhot 010021, People’s Republic of China

Institute of Biological and Medical Engineering, Guangdong Academy of Sciences, Guangzhou 510316, People’s Republic of China

School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing 100876, People’s Republic of China

Funding

Graduate Research and Innovation Projects of Jiangsu Province · National Key Research and Development Program of China · High Level Innovation and Entrepreneurial Research Team Program in Jiangsu · Nanjing University of Posts and Telecommunications · National Natural Science Foundation of China

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