High-Performance Ga2O3 Solar-Blind Photodetector Based on Thermal Oxidized Ga Buffer-Layer
Source abstract
Abstract
High-performance Ga 2 O 3 solar-blind photodetectors are critical for applications due to their selective solar-blind ultraviolet sensitivity. The quality of the Ga 2 O 3 film has a significant impact on the performance of photodetectors. This study presents an innovative approach to enhancing the quality of Ga 2 O 3 films through the introduction of a naturally graded buffer layer, which is formed by the oxidation of a metallic Ga film and significantly improves interface stability by accommodating lattice mismatches and reducing defects. The structural and compositional characteristics of Ga 2 O 3 films were comprehensively analyzed using UV–vis (ultraviolet–visible) spectroscopy, AFM (Atomic Force Microscope), PL (Photoluminescence Spectroscopy), TEM (Transmission Electron Microscope), and XPS (X-ray Photoelectron Spectroscopy). The photodetectors fabricated from these films demonstrate responsivity of 99.8 mA/W and a solar-blind UV/UV ratio of 1.17 × 10 3, with significant improvement compared to direct deposited films. This research highlights the potential of natural buffering layers to advance the performance of Ga 2 O 3 -based solar-blind UV detectors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
Zhejiang Institute of Advanced Materials, SHU, Jiashan 314113, China
Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology, Shanghai 201800, China
Funding
National Key Research and Development Program of China
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