Electrochemical preparation and characterization of three-dimensional nanostructured Sn2S3 semiconductor films with nanorod network

Abstract Three-dimensional (3D) nanostructured Sn 2 S 3 semiconductor films have been prepared on ITO-coated glass substrates by potentiostatic electrodeposition at −0.80 V (vs. SCE) from a novel plating bath containing K 4 P 2 O 3 as a complexing agent and Na 2 SO 3 as a stabilizing agent and by subsequent annealing. Results showed that the annealing drove the as-deposited Sn 2 S 3 films to grow from a granular structure into a nanorod network structure. The nanorods were around 50–100 nm in diameter and 1000 nm in length. The band gap of the annealed film was 1.65 eV and the conductivity was n type. The carrier mobility achieved up to 20.5 cm 2 V −1 s −1 due to the direct electrical pathways provided by the nanorod network.