Metal–organic framework derived porous 2D semiconductor C/ZnO nanocomposite with the high electrical conductivity

Abstract In this work, we report a simple method for synthesis of the C/ZnO semiconductor nanocomposite with the high porosity (732 m2/g) from fluorinated metal–organic framework (F-MOF), namely [Zn2(hfibba)2(L1)]n. D MF (TMU-44) where (L1 = N,N'-bis-pyridin-4-ylmethylene-benzene-1,5-diamine and H2hfibba = 4,4′-(hexafluoroisopropylidene) bis(benzoic acid)) with the limited porosity. The C/ZnO nanocomposite was characterized by powder X-ray diffraction; Brunauer-Emmett-Teller (BET) surface area, FE-SEM, and EDX mapping analysis. Furthermore, the as-synthesized C/ZnO nanocomposite showed favorable electrical conductivity at room temperature.