Large area vertical aligned MoS2 layers toward the application of thin film transistor

Abstract The current study investigates the fabrication of semiconducting molybdenum disulfide thin film using reactive magnetron sputtering technique at 300 °C for thin film transistors (TFTs) application. X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and Field emission-scanning electron microscopy (FE-SEM) techniques were used to identify the structural, elemental compositional and morphological properties of the synthesized thin film. XRD and Raman data confirm the growth of hexagonal structure and FE-SEM images indicate the vertical aligned layered morphology. The fabricated TFT demonstrates excellent performance in terms of field-effect mobility of 24.17 cm2 V−1 s−1 and a high Ion/Ioff ratio of the order of 106.