Ultraviolet radiation-induced photovoltaic action in γ-CuI/β-Ga2O3 heterojunction
Source abstract
Abstract
Abstract We report on the fabrication of γ-phase copper iodide (γ-CuI) and beta-gallium oxide (β-Ga2O3) heterostructure device and obtaining the ultraviolet (UV) radiation responsive photovoltaic action. The crystalline γ-CuI with predominant (1 1 1) plane orientation was deposited on the β-Ga2O3 by thermal evaporation process under vacuum condition. The electrical analysis revealed that the γ-CuI/β‐Ga2O3 heterojunction possess an excellent rectifying diode characteristic with high rectification ratio and turn-on voltage. The fabricated heterojunction device showed a photovoltaic action under solar-blind UV irradiation (254 nm) with outstanding photovoltage of 0.706 V and photocurrent of 2.49 mA/W. The device also showed a photovoltaic action under illumination of 365 nm and 300–400 nm wavelength of UV light, corresponding to absorption due to the γ-CuI layer. The UV irradiation-induced photovoltaic action in the γ-CuI/β‐Ga2O3 with outstanding photovoltage and excellent diode characteristics can be significant for self-powered UV photodetector applications.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (28)
Show source-provided references
1. A review of Ga2O3 materials, processing, and devices10.1063/1.5006941 ↗
2. Guest Editorial: The dawn of gallium oxide microelectronics10.1063/1.5017845 ↗
3. Current status of Ga2O3 power devices10.7567/JJAP.55.1202A1 ↗
4. Trapping effects in Si δ-doped β-Ga2O3MESFETs on an Fe-doped β-Ga2O3 substrate10.1109/LED.2018.2843344 ↗
5. Crystal structure of β-Ga2O310.1063/1.1731237 ↗
6. Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy
7. β-Ga2O3 NEMS oscillator for real-time middle ultraviolet (MUV) light detection10.1109/LED.2018.2850776 ↗
8. High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure10.1063/1.5002138 ↗
9. Mechanical and electrical characterization of β-Ga2O3 nanostructures for sensing applications10.1109/JSEN.2004.838669 ↗
10. Temperature-dependent characteristics of Ni/Au and Pt/Au Schottky diodes on β-Ga2O310.1149/2.0291701jss ↗
11. Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
12. Electrical characteristics of vertical Ni/β-Ga2O3 Schottky barrier diodes at high temperatures10.1149/2.0041702jss ↗
13. Electrical behavior of β-Ga2O3 Schottky diodes with different Schottky metals10.1116/1.4980042 ↗
14. On the band-structure lineup at Ga2O3, Gd2O3, and Ga2O3 (Gd2O3) heterostructures and Ga2O3 Schottky contacts
15. Graphene-β-Ga2O3 heterojunction for highly sensitive deep UV photodetector application10.1002/adma.201604049 ↗
16. Room-temperature fabricated amorphous Ga2O3 high-response-speed solar-blind photodetector on rigid and flexible substrates10.1002/adom.201700454 ↗
17. Recent progress in the growth of β-Ga2O3 for power electronics applications10.1016/j.mssp.2017.10.040 ↗
18. Truly transparent p-type γ-CuI thin films with high hole mobility10.1021/acs.chemmater.6b01358 ↗
19. Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit10.1073/pnas.1613643113 ↗
20. Photovoltaic action in graphene-Ga2O3 heterojunction with deep-ultraviolet irradiation10.1002/pssr.201800198 ↗
21. Raman tensor elements of β-Ga2O310.1038/srep35964 ↗
22. Observing charge transfer interaction in CuI and MoS2 heterojunction for photoresponsive device application10.1021/acsaelm.8b00069 ↗
23. Formation of effective CuI-GaN heterojunction with excellent ultraviolet photoresponsive photovoltage
24. A self-powered solar-blind photodetector based on a MoS2/β-Ga2O3 heterojunction10.1039/C8TC04258F ↗
25. Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector10.1039/C7TC03746E ↗
26. A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction10.1039/C7TC01741C ↗
27. Self-powered solar-blind photodetector with fast response based on Au/β-Ga2O3 nanowires array film Schottky junction10.1021/acsami.5b11956 ↗
28. Beta gallium oxide (β-Ga2O3) nanoelectromechanical transducer for dual-modality solar-blind ultraviolet light detection10.1063/1.5054625 ↗