p-Type CuBi 2 O 4 thin films prepared by flux-mediated one-pot solution process with improved structural and photoelectrochemical characteristics

Abstract The flux-mediated one-pot solution process based on the metal-organic decomposition (MOD) has been developed for the preparation of p-type complex oxide semiconductor CuBi 2 O 4 thin films. The precursor solutions with the various concentrations (0.5, 2, 5, and 10 mol% vs. CuBi 2 O 4 ) of aliovalent Li(I) flux produced the continuous and dense CuBi 2 O 4 thin films with stoichiometric composition by facilitating the crystallization from the liquid precursor solution. These films showed the high hole density and charge transfer characteristics, which lead to the high photoelectrochemical activity for water reduction.