Deposition of Cu2ZnSnS4 thin films by vacuum thermal evaporation from single quaternary compound source

Abstract Cu 2 ZnSnS 4 (CZTS) thin films were successfully deposited using vacuum thermal evaporation from single quaternary CZTS semiconducting material powder source, followed by annealing at 300 °C for 40 min under high purity N 2 atmosphere. X-ray diffraction (XRD) patterns indicated that as-deposited CZTS thin films transformed from amorphous state into crystalline state with kesterite structure after annealing. Energy dispersive X-ray spectroscopy (EDS) determined the compositions of the CZTS thin films were Zn-poor, Sn-rich and S-rich. Scanning electron microscope (SEM) images, ultraviolet–visible–near infrared (UV–Vis–NIR) spectra and the Hall measurements showed the annealed CZTS thin film exhibited a smooth, densely packed and homogeneous surface, a direct band gap of 1.55 eV and a p-type conductivity. The fabricated photovoltaic device obtained a conversion efficiency of 0.36%, open-circuit voltage of 493 mV, short-circuit current density of 1.76 mA·cm − 2 , and fill factor of 0.42.