An optically controlled synaptic device based on a PdSe 2 /α-In 2 Se 3 vdW heterostructure FET
Source abstract
Abstract
-based counterparts. Logic gate operations (OR and AND) were demonstrated using 642 nm, 785 nm and 406 nm wavelengths as optical inputs. In addition, a three-layer artificial neural network (ANN) was trained to recognize a 28 × 28 pixel handwritten MNIST dataset by a backpropagation algorithm demonstrating high recognition accuracy of 96% and 97% under wavelengths of 642 nm and 406 nm, respectively. This study provides an effective strategy for the development of versatile optically controlled neuromorphic devices as fundamental building blocks for on-chip optical communication, optoelectronic logic, and Internet of Things (IoT) applications.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · 2D Materials and Applications · Phase-change materials and chalcogenides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion – Israel Institute of Technology, Haifa 3200003, Israel
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