Retraction: Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability
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Source abstract
Abstract
Retraction of ‘Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability’ by Sung Hyeon Jung et al. , Mater. Horiz. , 2022, 9 , 1010–1022, https://doi.org/10.1039/D1MH01568K.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea
Indian Institute of Information Technology Surat, 395007, India
Research Center for Advanced Materials Technology, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea
Funding
National Research Foundation of Korea
References
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