journal article·2023Open access

Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film

Yuta Saito, Shogo Hatayama, Wen Hsin Chang, Naoya Okada, Toshifumi Irisawa, Fumihiko Uesugi, Masaki Takeguchi, Yuji Sutou, Paul Fons

Materials Horizons· Volume 10· Issue 6

Abstract

Here we report on the growth of thin crystalline films of the metastable phase GeTe2. Direct observation by transmission electron microscopy revealed a Te-Ge-Te stacking with van der Waals gaps. Moreover, electrical and optical measurements revealed the films exhibted semiconducting properties commensurate with electronics applications. Feasibility studies in which device structures were fabricated demonstrated the potential application of GeTe2 as an electronic material.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Advanced Thermoelectric Materials and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan

Electron Microscopy Analysis Station, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, 305-0047, Japan

Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba-yama, Sendai, 980-8579, Japan

Advanced Institute for Materials Research (AIMR), Tohoku University, 2-1-1 Katahira, Sendai, 980-8577, Japan

Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, 223-8522, Japan

Funding

Japan Society for the Promotion of Science · National Institute of Information and Communications Technology

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