On-demand quantum spin Hall insulators controlled by two-dimensional ferroelectricity
Source abstract
Abstract
We propose a new class of quantum materials, type-II two-dimensional ferroelectric topological insulators (2DFETIs), which allow non-volatility and an on-off switch of quantum spin Hall states. A general strategy is developed to realize type-II 2DFETIs using only topologically trivial 2D ferroelectrics. The built-in electric field arising from the out-of-plane polarization across the bilayer heterostrucuture of 2D ferroelectrics enables robust control of the band gap size and band inversion strength, which can be utilized to manipulate the topological phase transitions on-demand. Using first-principles calculations with hybrid density functionals, we demonstrate that a series of bilayer heterostructures are type-II 2DFETIs characterized with a direct coupling between the band topology and polarization state. We propose a few 2DFETI-based quantum electronics, including domain-wall quantum circuits and topological memristors.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Topological Materials and Phenomena · Multiferroics and related materials · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Zhejiang University, Hangzhou, Zhejiang 310058, P. R. China
Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
Fudan University, Shanghai 200433, China
Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
Department of Physics, Sungkyunkwan University, Suwon 16419, Korea
Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
Funding
National Natural Science Foundation of China · Korea Institute of Science and Technology Information
References (49)
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