journal article·2019-06-12

Rapid and Selective Deposition of Patterned Thin Films on Heterogeneous Substrates via Spin Coating

Yuanyi Zhang, Colton A. D’Ambra, Reika Katsumata, Ryan L. Burns, Mark H. Somervell, Rachel A. Segalman, Craig J. Hawker, Christopher M. Bates

ACS Applied Materials & Interfaces· Volume 11· Issue 23
Publisher page

Abstract

The selective deposition of polymer thin films can be achieved via spin coating by manipulating interfacial interactions. While this “spin dewetting” approach sometimes generates spatial localization on topographic and chemical patterns, the connection between material selection, process parameters, and resulting film characteristics remains poorly understood. Here, we demonstrate that accurate control over these parameters allows incomplete trichlorosilane self-assembled monolayers (SAMs) to induce spin dewetting on both homogeneous (SiO2) and heterogeneous (Cu/SiO2 or TiN/SiO2) surfaces. Glassy polymers undergo a sharp transition from uniform wetting to complete dewetting depending on spin speed, solution concentration, polymer molecular weight, and SAM chemistry. Under optimal conditions, spin dewetting on line–space patterns results in the selective deposition of polymer over regions not functionalized with SAM. The insights described herein clarify the importance of different variables involved in spin dewetting and provide access to a versatile strategy for patterning polymeric thin films.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Fluid Dynamics and Thin Films · Block Copolymer Self-Assembly · Nanofabrication and Lithography Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Tokyo Electron U.S. Holdings, Inc., Austin, Texas 78741, United States

Funding

Semiconductor Research Corporation

References (39)

Show source-provided references
1. 10.1021/cr900244n10.1021/cr900244n ↗
2. 10.1126/science.272.5258.8510.1126/science.272.5258.85 ↗
3. 10.1002/adma.1994006071910.1002/adma.19940060719 ↗
4. 10.1038/3502322310.1038/35023223 ↗
5. 10.1007/s00441-009-0896-510.1007/s00441-009-0896-5 ↗
6. 10.1021/nl063056l10.1021/nl063056l ↗
7. Chen, Y.; Cheng, Q.; Kang, W. In Technological Merits, Process Complexity, and Cost Analysis of Self-Aligned Multiple Patterning, SPIE Advanced Lithography; SPIE, 2012; p 832620.10.1117/12.916490 ↗
8. Yaegashi, H. In Pattern Fidelity Control in Multi-Patterning towards 7 nm Node, International Conference on Nanotechnology (IEEE-NANO), 2016; pp 452–455.10.1109/NANO.2016.7751406 ↗
9. 10.1021/acs.chemmater.5b0331910.1021/acs.chemmater.5b03319 ↗
10. 10.1021/nn505761x10.1021/nn505761x ↗
11. 10.1021/nl049285u10.1021/nl049285u ↗
12. 10.1021/am404319510.1021/am4043195 ↗
13. 10.1021/cm035140x10.1021/cm035140x ↗
14. 10.1021/jp502669f10.1021/jp502669f ↗
15. 10.1038/3607510.1038/36075 ↗
16. 10.1002/adma.20080205210.1002/adma.200802052 ↗
17. 10.1021/ma961686b10.1021/ma961686b ↗
18. 10.1039/C7SC00289K10.1039/C7SC00289K ↗
19. 10.1021/la020180l10.1021/la020180l ↗
20. 10.1088/0953-8984/17/9/00710.1088/0953-8984/17/9/007 ↗
21. 10.1016/S0032-3861(03)00315-X10.1016/S0032-3861(03)00315-X ↗
22. 10.1002/marc.20060084010.1002/marc.200600840 ↗
23. 10.1021/acs.macromol.8b0062010.1021/acs.macromol.8b00620 ↗
24. 10.1038/s41598-018-25504-710.1038/s41598-018-25504-7 ↗
25. 10.1021/nl503320510.1021/nl5033205 ↗
26. 10.1039/C7SM00799J10.1039/C7SM00799J ↗
27. 10.1021/acsnano.8b0337810.1021/acsnano.8b03378 ↗
28. 10.1063/1.362560510.1063/1.3625605 ↗
29. 10.1021/la011813j10.1021/la011813j ↗
30. 10.1063/1.32535710.1063/1.325357 ↗
31. 10.1002/pen.1037310.1002/pen.10373 ↗
32. 10.1103/PhysRevLett.68.7510.1103/PhysRevLett.68.75 ↗
33. 10.1134/S107042720711033X10.1134/S107042720711033X ↗
34. 10.1021/jp060923210.1021/jp0609232 ↗
35. 10.1016/j.tsf.2003.10.15310.1016/j.tsf.2003.10.153 ↗
36. 10.1021/ma060535y10.1021/ma060535y ↗
37. 10.1021/ja207635f10.1021/ja207635f ↗
38. 10.1021/cm050144i10.1021/cm050144i ↗
39. 10.1209/epl/i2005-10369-610.1209/epl/i2005-10369-6 ↗