journal article·2022-02-09Open access

Insights into the Mechanism for Vertical Graphene Growth by Plasma-Enhanced Chemical Vapor Deposition

Jie Sun, Tanupong Rattanasawatesun, Penghao Tang, Zhaoxia Bi, Santosh Pandit, Lisa Lam, Caroline Wasén, Malin Erlandsson, Maria Bokarewa, Jichen Dong, Feng Ding, Fangzhu Xiong, Ivan Mijakovic

Abstract

Vertically oriented graphene (VG) has attracted attention for years, but the growth mechanism is still not fully revealed. The electric field may play a role, but the direct evidence and exactly what role it plays remains unclear. Here, we conduct a systematic study and find that in plasma-enhanced chemical vapor deposition, the VG growth preferably occurs at spots where the local field is stronger, for example, at GaN nanowire tips. On almost round-shaped nanoparticles, instead of being perpendicular to the substrate, the VG grows along the field direction, that is, perpendicular to the particles' local surfaces. Even more convincingly, the sheath field is screened to different degrees, and a direct correlation between the field strength and the VG growth is observed. Numerical calculation suggests that during the growth, the field helps accumulate charges on graphene, which eventually changes the cohesive graphene layers into separate three-dimensional VG flakes. Furthermore, the field helps attract charged precursors to places sticking out from the substrate and makes them even sharper and turn into VG. Finally, we demonstrate that the VG-covered nanoparticles are benign to human blood leukocytes and could be considered for drug delivery. Our research may serve as a starting point for further vertical two-dimensional material growth mechanism studies.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Graphene research and applications · Graphene and Nanomaterials Applications · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350116, China

Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296, Sweden

Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, China

Division of Solid State Physics and NanoLund, Department of Physics, Lund University, Box 118, S-22100 Lund, Sweden

Department of Biology and Biological Engineering, Chalmers University of Technology, Göteborg 41296, Sweden

Department of Rheumatology and Inflammation Research, University of Gothenburg, Göteborg 41346, Sweden

Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea

The Novo Nordisk Foundation Center for Biosustainability, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark

Funding

Novo Nordisk Fonden · National Natural Science Foundation of China · Fujian provincial projects · Mindu Innovation Laboratory Funding

References (33)

Show source-provided references
1. 10.1039/c4cs00352g10.1039/c4cs00352g ↗
2. 10.1088/1361-6528/aa8d9010.1088/1361-6528/aa8d90 ↗
3. 10.1016/j.physe.2012.09.02710.1016/j.physe.2012.09.027 ↗
4. 10.1063/1.509731310.1063/1.5097313 ↗
5. 10.1088/0957-4484/27/15/15570110.1088/0957-4484/27/15/155701 ↗
6. 10.1364/ome.40488110.1364/ome.404881 ↗
7. 10.1063/1.500178210.1063/1.5001782 ↗
8. 10.1063/1.178225310.1063/1.1782253 ↗
9. 10.1039/c1ee01140e10.1039/c1ee01140e ↗
10. 10.1088/1742-6596/1319/1/01200710.1088/1742-6596/1319/1/012007 ↗
11. Chen, J.; Bo, Z.; Lu, G. Vertically-Oriented Graphene─PECVD Synthesis and Applications; Springer: Switzerland, 2015; pp 19–34.10.1007/978-3-319-15302-5_3 ↗
12. 10.1038/srep0332810.1038/srep03328 ↗
13. 10.1063/1.299963610.1063/1.2999636 ↗
14. 10.1038/srep0386210.1038/srep03862 ↗
15. 10.1021/nn300900v10.1021/nn300900v ↗
16. 10.1039/c3nr33449j10.1039/c3nr33449j ↗
17. Bisht A. · 2014 · 55910.1007/978-3-319-03002-9_140 ↗
18. 10.1063/1.360556010.1063/1.3605560 ↗
19. 10.1016/j.carbon.2007.06.01710.1016/j.carbon.2007.06.017 ↗
20. 10.1021/nl501039c10.1021/nl501039c ↗
21. 10.1021/nl015693b10.1021/nl015693b ↗
22. 10.1021/jz200087w10.1021/jz200087w ↗
23. 10.1039/c3tb21385d10.1039/c3tb21385d ↗
24. 10.1002/admi.20170133110.1002/admi.201701331 ↗
25. 10.1021/jz200641c10.1021/jz200641c ↗
26. 10.1166/jnn.2002.08010.1166/jnn.2002.080 ↗
27. 10.1016/j.carbon.2012.07.03510.1016/j.carbon.2012.07.035 ↗
28. 10.1039/c5nr03454j10.1039/c5nr03454j ↗
29. Frisch, M. J.; Trucks, G. W.; Schlegel, H. B.; Scuseria, G. E.; Robb, M. A.; Cheeseman, J. R.; Scalmani, G.; Barone, V.; Mennucci, B.; Petersson, G. A.; Nakatsuji, H.; Caricato, M.; Li, X.; Hratchian, H. P.; Izmaylov, A. F.; Bloino, J.; Zheng, G.; Sonnenberg, J. L.; Hada, M.; Ehara, M.; Toyota, K.; Fukuda, R.; Hasegawa, J.; Ishida, M.; Nakajima, T.; Honda, Y.; Kitao, O.; Nakai, H.; Vreven, T.; Montgomery, J. A., Jr.; Peralta, J. E.; Ogliaro, F.; Bearpark, M.; Heyd, J. J.; Brothers, E.; Kudin, K. N.; Staroverov, V. N.; Kobayashi, R.; Normand, J.; Raghavachari, K.; Rendell, A.; Burant, J. C.; Iyengar, S. S.; Tomasi, J.; Cossi, M.; Rega, N.; Millam, J. M.; Klene, M.; Knox, J. E.; Cross, J. B.; Bakken, V.; Adamo, C.; Jaramillo, J.; Gomperts, R.; Stratmann, R. E.; Yazyev, O.; Austin, A. J.; Cammi, R.; Pomelli, C.; Ochterski, J. W.; Martin, R. L.; Morokuma, K.; Zakrzewski, V. G.; Voth, G. A.; Salvador, P.; Dannenberg, J. J.; Dapprich, S.; Daniels, A. D.; Farkas, Ö.; Foresman, J. B.; Ortiz, J. V.; Cioslowski, J.; Fox, D. J. Gaussian 09; Gaussian, Inc.: Wallingford CT, 2009.
30. 10.1021/acs.jpcc.1c0933410.1021/acs.jpcc.1c09334 ↗
31. 10.1134/s002247661506023210.1134/s0022476615060232 ↗
32. 10.1039/d0nr00755b10.1039/d0nr00755b ↗
33. 10.1038/s41598-017-05805-z10.1038/s41598-017-05805-z ↗