Electro-Thermal Model of Threshold Switching in TaOx-Based Devices
Source abstract
Abstract
Pulsed and quasi-static current–voltage ( I – V ) characteristics of threshold switching in TiN/TaO x /TiN crossbar devices were measured as a function of stage temperature (200–495 K) and oxygen flow during the deposition of TaO x . A comparison of the pulsed and quasi-static characteristics in the high resistance part of the I – V revealed that Joule self-heating significantly affected the current and was a likely source of negative differential resistance (NDR) and thermal runaway. The experimental quasi-static I – V ’s were simulated using a finite element electro-thermal model that coupled current and heat flow and incorporated an external circuit with an appropriate load resistor. The simulation reproduced the experimental I – V including the OFF-state at low currents and the volatile NDR region. In the NDR region, the simulation predicted spontaneous current constriction forming a small-diameter hot conducting filament with a radius of 250 nm in a 6 μm diameter device.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
Funding
Defense Advanced Research Projects Agency · Microelectronics Advanced Research Corporation · Division of Materials Research
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