Implementation of Convolutional Neural Networks in Memristor Crossbar Arrays with Binary Activation and Weight Quantization
Source abstract
Abstract
We propose a hardware-friendly architecture of a convolutional neural network using a 32 × 32 memristor crossbar array having an overshoot suppression layer. The gradual switching characteristics in both set and reset operations enable the implementation of a 3-bit multilevel operation in a whole array that can be utilized as 16 kernels. Moreover, a binary activation function mapped to the read voltage and ground is introduced to evaluate the result of training with a boundary of 0.5 and its estimated gradient. Additionally, we adopt a fixed kernel method, where inputs are sequentially applied to a crossbar array with a differential memristor pair scheme, reducing unused cell waste. The binary activation has robust characteristics against device state variations, and a neuron circuit is experimentally demonstrated on a customized breadboard. Thanks to the analogue switching characteristics of the memristor device, the accurate vector-matrix multiplication (VMM) operations can be experimentally demonstrated by combining sequential inputs and the weights obtained through tuning operations in the crossbar array. In addition, the feature images extracted by VMM during the hardware inference operations on 100 test samples are classified, and the classification performance by off-chip training is compared with the software results. Finally, inference results depending on the tolerance are statistically verified through several tuning cycles.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · CCD and CMOS Imaging Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering, Inha University, Incheon 22212, Korea
Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea
Department of Semiconductor Engineering, Seoul National University of Science and Technology, Seoul 01811, Korea
Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Korea
Funding
National Research Foundation of Korea · Institute for Information and Communications Technology Promotion
References (68)
Show source-provided references
1. He, K.; Zhang, X.; Ren, S.; Sun, J.Deep Residual Learning for Image Recognition. InProceedings of the IEEE Conference on Computer Vision and Pattern Recognition (CVPR)2016; pp 770–778.10.1109/CVPR.2016.90 ↗
2. 10.1109/TASLP.2014.233973610.1109/TASLP.2014.2339736 ↗
3. 10.1016/j.procs.2018.05.19810.1016/j.procs.2018.05.198 ↗
4. 10.1109/5.72679110.1109/5.726791 ↗
5. 10.1088/1361-6528/abf0cc10.1088/1361-6528/abf0cc ↗
6. Sheu, S.S.; Chiang, P.C.; Lin, W.P.; Lee, H.Y.; Chen, P.S.; Chen, Y.S.; Wu, T.Y.; Chen, F. T.; Su, K.L.; Kao, M.J. A 5ns Fast Write Multi-level Non-volatile 1 K Bits RRAM Memory with Advance Write Scheme. In2009 Symposium on VLSI Circuits; IEEE, 2009; pp 82–83.
7. 10.1016/j.chaos.2021.11158710.1016/j.chaos.2021.111587 ↗
8. 10.1016/j.neucom.2021.04.06110.1016/j.neucom.2021.04.061 ↗
9. 10.1038/s41586-020-1942-410.1038/s41586-020-1942-4 ↗
10. 10.1038/s41928-020-0397-910.1038/s41928-020-0397-9 ↗
11. 10.1002/adfm.20211199610.1002/adfm.202111996 ↗
12. 10.1002/aisy.20210004110.1002/aisy.202100041 ↗
13. 10.1038/s42256-019-0089-110.1038/s42256-019-0089-1 ↗
14. 10.1038/s41928-023-01010-110.1038/s41928-023-01010-1 ↗
15. 10.1007/s40747-021-00282-410.1007/s40747-021-00282-4 ↗
16. 10.1002/aisy.20190011610.1002/aisy.201900116 ↗
17. 10.3389/fnins.2020.0090710.3389/fnins.2020.00907 ↗
18. 10.1038/s41565-021-00874-810.1038/s41565-021-00874-8 ↗
19. 10.1038/srep1049210.1038/srep10492 ↗
20. 10.3389/fnins.2019.0009510.3389/fnins.2019.00095 ↗
21. 10.1126/sciadv.abj480110.1126/sciadv.abj4801 ↗
22. 10.1109/JETCAS.2017.277152910.1109/JETCAS.2017.2771529 ↗
23. Gokmen, T.; Rasch, M. J.; Haensch, W. The marriage of training and inference for scaled deep learning analog hardware. InProc. IEEE International Electron Devices Meeting (IEDM); IEEE, 2019; pp 22.23.21–22.23.24.10.1109/IEDM19573.2019.8993573 ↗
24. 10.1145/314547810.1145/3145478 ↗
25. 10.3389/fncom.2021.64612510.3389/fncom.2021.646125 ↗
26. 10.1002/aisy.20200011510.1002/aisy.202000115 ↗
27. Courbariaux, M.; Hubara, I.; Soudry, D.; El-Yaniv, R.; Bengio, Y. Binarized neural networks: Training deep neural networks with weights and activations constrained to+ 1 or–1arXiv preprint arXiv:1602.0302016.
28. Courbariaux, M.; Bengio, Y.; David, J.P. Binaryconnect: Training deep neural networks with binary weights during propagationsAdv. Neural Inf. Process. Syst.2015; Vol. 28.
29. Rastegari, M.; Ordonez, V.; Redmon, J.; Farhadi, A. XNOR-net: Imagenet Classification Using Binary Convolutional Neural Networks. InProc. European Conference on Computer Vision (ECCV); Springer, 2016; pp 525–542.10.1007/978-3-319-46493-0_32 ↗
30. Tang, T.; Xia, L.; Li, B.; Wang, Y.; Yang, H. Binary Convolutional Neural Network on RRAM. InProc. Asia and South Pacific Design Automation Conference (ASP-DAC); IEEE, 2017; pp 782–787.10.1109/ASPDAC.2017.7858419 ↗
31. Sun, X.; Yin, S.; Peng, X.; Liu, R.; Seo, J.s.; Yu, S. XNOR-RRAM: A Scalable and Parallel Resistive Synaptic Architecture for Binary Neural Networks. InProc. Design, Automation & Test in Europe Conference & Exhibition (DATE); IEEE, 2018; pp 1423–1428.10.23919/DATE.2018.8342235 ↗
32. 10.1109/TED.2020.299845710.1109/TED.2020.2998457 ↗
33. 10.3389/fnins.2021.63952610.3389/fnins.2021.639526 ↗
34. Sun, X.; Peng, X.; Chen, P.Y.; Liu, R.; Seo, J.s.; Yu, S. Fully Parallel RRAM Synaptic Array for Implementing Binary Neural Network with (+1, −1) Weights and (+1, 0) Neurons. InProc. Asia and South Pacific Design Automation Conference (ASP-DAC); IEEE, 2018; pp 574–579.10.1109/ASPDAC.2018.8297384 ↗
35. Hubara I. · J. Mach. Learn. Res. · 2017 · 18 · 1
36. 10.1109/TED.2022.316911210.1109/TED.2022.3169112 ↗
37. 10.3390/app1105205910.3390/app11052059 ↗
38. 10.1088/1361-6528/ac765110.1088/1361-6528/ac7651 ↗
39. 10.1002/aisy.20200022410.1002/aisy.202000224 ↗
40. Suri, M.; Bichler, O.; Querlioz, D.; Cueto, O.; Perniola, L.; Sousa, V.; Vuillaume, D.; Gamrat, C.; DeSalvo, B. Phase Change Memory as Synapse for Ultra-dense Neuromorphic Systems: Application to Complex Visual Pattern Extraction. InProc. International Electron Devices Meeting (IEDM); IEEE, 2011; pp 4.4.1–4.4.4.10.1109/IEDM.2011.6131488 ↗
41. 10.1109/TNANO.2012.220212510.1109/TNANO.2012.2202125 ↗
42. 10.1002/aelm.20210049910.1002/aelm.202100499 ↗
43. Lee, H.; Chen, P.; Wu, T.; Chen, Y.; Wang, C.; Tzeng, P.; Lin, C.; Chen, F.; Lien, C.; Tsai, M.J. Low Power and High Speed Bipolar Switching with a Thin Reactive Ti Buffer Layer in Robust HfO2Based RRAM. InProc. IEEE International Electron Devices Meeting (IEDM); IEEE, 2008; pp 1–4.10.1109/IEDM.2008.4796677 ↗
44. Wang, C.H.; Tsai, Y.H.; Lin, K.C.; Chang, M.F.; King, Y.C.; Lin, C.J.; Sheu, S.S.; Chen, Y.S.; Lee, H.Y.; Chen, F. T. Three-Dimensional 4F2ReRAM Cell with CMOS Logic Compatible Process. InProc. International Electron Devices Meeting (IEDM); IEEE, 2010; pp 29.26.21–29.26.24.10.1109/IEDM.2010.5703446 ↗
45. Lv, H.; Xu, X.; Yuan, P.; Dong, D.; Gong, T.; Liu, J.; Yu, Z.; Huang, P.; Zhang, K.; Huo, C. BEOL based RRAM with One Extra-mask for Low Cost, Highly Reliable Embedded Application in 28 nm Node and Beyond. InProc. IEEE International Electron Devices Meeting (IEDM); IEEE, 2017; pp 2.4.1–2.4.4.10.1109/IEDM.2017.8268312 ↗
46. 10.1002/adma.20120368010.1002/adma.201203680 ↗
47. 10.1063/1.510865010.1063/1.5108650 ↗
48. 10.1016/j.chaos.2022.11199910.1016/j.chaos.2022.111999 ↗
49. 10.1002/aisy.20200013710.1002/aisy.202000137 ↗
50. 10.1002/aisy.20217006510.1002/aisy.202170065 ↗
51. 10.1002/adma.20170591410.1002/adma.201705914 ↗
52. 10.1038/s41467-021-25455-010.1038/s41467-021-25455-0 ↗
53. 10.1002/adfm.20220033710.1002/adfm.202200337 ↗
54. 10.1038/s41467-018-04482-410.1038/s41467-018-04482-4 ↗
55. 10.1038/s41563-019-0291-x10.1038/s41563-019-0291-x ↗
56. 10.1038/s41928-017-0002-z10.1038/s41928-017-0002-z ↗
57. 10.1039/D0NA00100G10.1039/D0NA00100G ↗
58. 10.1002/adfm.20130352010.1002/adfm.201303520 ↗
59. 10.1038/s41467-019-11187-910.1038/s41467-019-11187-9 ↗
60. 10.1021/acs.nanolett.2c0362410.1021/acs.nanolett.2c03624 ↗
61. 10.1109/TED.2012.222514710.1109/TED.2012.2225147 ↗
62. 10.1021/acs.nanolett.6b0178110.1021/acs.nanolett.6b01781 ↗
63. 10.1109/TNANO.2017.278436410.1109/TNANO.2017.2784364 ↗
64. 10.1021/acsaelm.0c0014810.1021/acsaelm.0c00148 ↗
65. 10.1021/acsomega.7b0121110.1021/acsomega.7b01211 ↗
66. 10.1002/aisy.20210027310.1002/aisy.202100273 ↗
67. 10.1063/5.002775710.1063/5.0027757 ↗
68. Krishnamoorthi, R.Quantizing Deep Convolutional Networks for Efficient Inference: A Whitepaper, arXiv preprint arXiv:1806.083422018.