journal article·2021-04-07

High-Performance MoS2 Photodetectors Prepared Using a Patterned Gallium Nitride Substrate

Xinke Liu, Shengqun Hu, Zhichen Lin, Xiaohua Li, Lijun Song, Wenjie Yu, Qi Wang, Wei He

ACS Applied Materials & Interfaces· Volume 13· Issue 13
Publisher page

Abstract

Strain-adjusting the band gap of MoS2 using patterned substrates to improve the photoelectric performance of MoS2 has gradually become a research hotspot in recent years. However, there are still difficulties in obtaining high-quality two-dimensional materials and preparing photodetectors on patterned substrates. To overcome this, a continuous multilayer MoS2 film was transferred to a patterned gallium nitride substrate (PGS) for the fabrication of photodetectors, and density functional theory calculations showed that the band gap of the MoS2 film increased and that the electron effective mass decreased due to the introduction of PGS. In addition, finite difference time domain simulation showed that the electric field in the MoS2 area on the PGS is enhanced compared with that on the flat gallium nitride substrate due to the enhanced light scattering effect of the PGS. The photoresponse of the MoS2/PGS photodetector at 460 nm was also enhanced, with Iph increasing by 5 times, R increasing by 2 times, NEP decreasing to 3.88 × 10–13 W/Hz1/2, and D* increasing to 5.6 × 108 Jones. Our research has important guiding significance in adjusting the band gap of MoS2 and enhancing the photoelectric performance of MoS2 photodetectors.
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Research context

OpenAlex topics: 2D Materials and Applications · ZnO doping and properties · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

College of Materials Science and Engineering, College of Electronics and Information Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen 518060, People Republic of China

Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore

Research Center of Guangdong Intelligent Charging and System Integration Engineering Technology, Shenzhen Winsemi Microelectronics Co., Ltd., Shenzhen 518000, People’s Republic of China

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road, Shanghai 200050, People’s Republic of China

Dongguan Institute of Opto-Electronics, Peking University, Doguanguan 523808, People’s Republic of China

Funding

National Taipei University of Technology · Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Shenzhen University · State Key Laboratory of Functional Materials for Informatic · Science and Technology Foundation of Shenzhen · Guangdong Province

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