journal article·2021-05-19

Mid-Infrared Photodetection of Type-II Dirac Semimetal 1T-PtTe2 Grown by Molecular Beam Epitaxy

Tianyao Wei, Ximiao Wang, Qi Yang, Zhihao He, Peng Yu, Zhuang Xie, Huanjun Chen, Shuwei Li, Shuxiang Wu

ACS Applied Materials & Interfaces· Volume 13· Issue 19
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Abstract

Mid-infrared (MIR) photodetection is of significance in civil and military applications because it shows superiority in absorbing the vibration of various molecules and covering atmospheric transmission windows. Recently, the PtTe2, a typical type-II Dirac semimetal, has come under the spotlight due to its unique photodetection sensibility in the MIR region and robust stability in the atmosphere. Here, the high-quality and large-scale 1T-PtTe2 thin films with air stability were grown by molecular beam epitaxy. Broadband photoresponse of the photodetectors of PtTe2 from 420 nm to 10.7 μm shows high responsivity and detectivity of 0.2 mA W–1 and 2.6 × 107 Jones at 10.7 μm and 1.6 mA W–1 and 2.2 × 108 Jones at 4.7 μm under the atmosphere, respectively. Moreover, the photodetectors exhibit high sensitivity in visible and near-infrared regions (8.2 mA W–1 at 650 nm and 15.6 mA W–1 at 960 nm). The power- and polarization-dependent photoresponse measurements reveal the linear relationship of power photoresponse and obvious anisotropic photoresponse (the ratio of anisotropy ellipse is 8.3 at 10.7 μm), respectively. These results suggest that the PtTe2 could be expected to be an advanced photodetection material for polarization angle-sensitive detection, infrared imaging, and photodetection from the visible to MIR range.
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Research context

OpenAlex topics: 2D Materials and Applications · Topological Materials and Phenomena · Photonic and Optical Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275, P. R. China

School of Electronics and Information Technology, State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou, Guangdong 510275, P. R. China

School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou, Guangdong 510275, P. R. China

Funding

Ministry of Education of the People's Republic of China · Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Natural Science Foundation of Guangdong Province · Guangdong Basic and Applied Basic Research Foundation

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