journal article·2020-09-02

Exchange Bias in a La0.67Sr0.33MnO3/NiO Heterointerface Integrated on a Flexible Mica Substrate

Jijie Huang, Han Wang, Xuejing Wang, Xingyao Gao, Juncheng Liu, Haiyan Wang

ACS Applied Materials & Interfaces· Volume 12· Issue 35
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Abstract

Flexible electronics integrating spintronics are of great potential in the areas of lightweight and flexible personal electronics. The integration of ferromagnetic and other functional oxides on flexible mica substrates is crucial for the proposed computer technology. In this work, we demonstrate the successful integration of a ferromagnetic–antiferromagnetic nanocomposite of La0.67Sr0.33MnO3 (LSMO)/NiO with unique perpendicular exchange bias properties on a flexible mica substrate. Utilization of multiple sets of buffer layers has been attempted to overcome the large mismatch between the film and the substrate and to achieve high-quality nanocomposite growth on mica. Exchange bias of ∼200 and ∼140 Oe for the applied magnetic field perpendicular and parallel to the film surface, respectively, has been achieved and attributed to the strongly coupled vertical ferromagnetic/antiferromagnetic interfaces. Such nanocomposite thin films exhibit excellent structural robustness and reliability under a cyclic bending test. This work demonstrates the enormous potential of integrating complex two-phase multifunctional oxides on mica for future flexible wearable personal devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Multiferroics and related materials · ZnO doping and properties · Magnetic and transport properties of perovskites and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials, Sun Yat-Sen University, Guangzhou, Guangdong 510275, China

School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States

School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States

Funding

Guangdong Basic and Applied Basic Research Foundation

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